TRENCHSTOP™ Series
IKB06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and
vacuum cleaners
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKB06N60T
VCE
IC;Tc=100°C VCE(sat),Tj=25°C
600V
6A
1.5V
C
G
E
PG-TO263-3
Tj,max
Marking
Package
175C
K06T60
PG-TO263-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage, Tj ≥ 25C
VCE
600
IC
12
Unit
V
DC collector current, limited by Tjmax
TC = 25C
6
TC = 100C
Pulsed collector current, tp limited by Tjmax
ICpul s
18
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
18
IF
12
A
Diode forward current, limited by Tjmax
TC = 25C
6
TC = 100C
Diode pulsed current, tp limited by Tjmax
IFpul s
18
Gate-emitter voltage
VGE
20
V
tSC
5
s
Ptot
88
W
2)
Short circuit withstand time
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature (reflow soldering, MSL1)
1
2)
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
1
Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
K/W
Characteristic
IGBT thermal resistance,
junction – case
RthJC
1.7
Diode thermal resistance,
junction – case
RthJCD
2.6
Thermal resistance,
junction – ambient
RthJA
62
Thermal resistance,
junction – ambient
RthJA
Footprint
6cm² Cu
65
40
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
-
1.5
1.8
2.05
T j =2 5 C
-
1.6
2.05
T j =1 7 5 C
-
1.6
-
4.1
4.6
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V ,
I C = 0. 25m A
Collector-emitter saturation voltage
VCE(sat)
VF
Diode forward voltage
V G E = 15 V , I C = 6 A
T j =2 5 C
T j =1 7 5 C
V
V G E = 0V , I F = 6 A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 18m A ,
VCE=VGE
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
T j =2 5 C
T j =1 7 5 C
-
-
40
700
µA
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 6 A
-
3.6
-
S
Integrated gate resistor
RGint
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
368
-
Output capacitance
Coss
V G E = 0V ,
-
28
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
11
-
Gate charge
QGate
V C C = 48 0 V, I C =6 A
V G E = 15 V
-
42
-
nC
-
7
-
nH
-
55
-
A
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
V G E = 15 V ,t S C 5 s
V C C = 4 0 0 V,
T j = 25 C
pF
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
2
Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9
-
-
6
-
-
130
-
-
58
-
-
0.09
-
-
0.11
-
-
0.2
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L =60nH, C=40pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =2 5 C ,
-
123
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 6 A,
-
190
-
nC
Diode peak reverse recovery current
Irrm
d i F / d t =5 5 0 A/ s
-
5.3
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
450
-
A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9
-
-
8
-
-
165
-
-
84
-
-
0.14
-
-
0.18
-
-
0.335
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=175 C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L =60nH, C=40pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =1 7 5 C
-
180
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 6 A,
-
500
-
nC
Diode peak reverse recovery current
Irrm
d i F / d t =5 5 0 A/ s
-
7.6
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
285
-
A/s
IFAG IPC TD VLS
3
Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
tp=1µs
10A
15A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
18A
T C =80°C
12A
T C =110°C
9A
6A
Ic
3A
Ic
5µs
10µs
50µs
1A
500µs
5ms
DC
0A
100Hz
1kHz
10kH z
0,1A
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=0/15V)
80W
15A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
10V
60W
40W
10A
5A
20W
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj 175C)
IFAG IPC TD VLS
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
15A
15A
12A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
V G E =20V
15V
13V
11V
9A
9V
7V
6A
3A
15V
13V
11V
9A
9V
7V
6A
3A
0A
0A
0V
1V
2V
3V
0V
1 5A
1 2A
9A
6A
T J =1 75 °C
3A
25 °C
0A
0V
2V
4V
6V
8V
1 0V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
12A
IC =12A
2,5V
2,0V
IC =6A
1,5V
1,0V
IC =3A
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
t d(off)
td(off)
100ns
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
tf
t d(on)
10ns
tf
td(on)
tr
10ns
tr
1ns
0A
3A
6A
9A
12A
1ns
15A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
tf
t d(on)
10ns
tr
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
100ns td(off)
1ns
6V
5V
m ax.
4V
typ.
3V
m in.
2V
1V
0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.18mA)
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Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
*) E on and E ts include losses
E ts*
due to diode recovery
E ts *
0,5 mJ
0,4 mJ
0,3 mJ
E off
0,2 mJ
E on*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) E on and E ts include losses
due to diode recovery
0,6 mJ
0,4 mJ
0,3 mJ
E on*
0,2 mJ
E off
0,1 mJ
0,1 mJ
0,0 mJ 0A
2A
4A
6A
8A
0,0 mJ
10A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, rG=23Ω,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
*) E on and E ts include losses
due to diode recovery
0,5m J
E, SWITCHING ENERGY LOSSES
0,4mJ
E, SWITCHING ENERGY LOSSES
0,3mJ
E ts *
0,2mJ
E off
0,1mJ
due to diode recovery
E ts *
0,4m J
0,3m J
E off
0,2m J
E on *
0,1m J
E on*
0,0mJ
50°C
100°C
0,0m J
200V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
300V
400V
500V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
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Rev. 2.5 20.09.2013
IKB06N60T
p
TRENCHSTOP™ Series
VGE, GATE-EMITTER VOLTAGE
1nF
C iss
c, CAPACITANCE
15V
120V
10V
48 0V
100pF
C oss
5V
C rss
10pF
0V
0nC
10 nC
20n C
30nC
40nC
50nC
0V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 6 A)
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
80A
60A
40A
20A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax