IKB15N60TATMA1

TRENCHSTOP™ Series IKB15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKB15N60T G E PG-TO263-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 15A 1.5V 175C K15T60 PG-TO263-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 26 Unit V DC collector current, limited by Tjmax TC = 25C, value limited by bondwire 23 TC = 100C Pulsed collector current, tp limited by Tjmax ICpul s 45 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 45 IF 26 A Diode forward current, limited by Tjmax TC = 25C, value limited by bondwire 23 TC = 100C Diode pulsed current, tp limited by Tjmax IFpul s 45 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 130 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature (reflow soldering, MSL1) - Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series IKB15N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.15 K/W RthJCD 1.9 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case RthJA Thermal resistance, 6cm² Cu 40 junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - T j =2 5 C - 1.65 2.05 T j =1 7 5 C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 15 A V G E = 0V , I F = 1 5 A Gate-emitter threshold voltage VGE(th) I C = 21 0µ A , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 8.7 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 860 - Output capacitance Coss V G E = 0V , - 55 - Reverse transfer capacitance Crss f= 1 MH z - 24 - Gate charge QGate V C C = 48 0 V, I C =1 5 A - 87 - nC - 7 - nH - 137.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series IKB15N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 11 - - 188 - - 50 - - 0.22 - - 0.35 - - 0.57 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 34 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 0.24 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ s - 10.4 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 718 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 15 - - 212 - - 79 - - 0.34 - - 0.47 - - 0.81 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 140 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 1.0 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ s - 14.7 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 495 - A/s IFAG IPC TD VLS 3 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series IKB15N60T q t p =2µs 10µs T C =80°C 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A T C =110°C 20A Ic 10A 10A 50µs 1A 1ms 10ms DC Ic 0A 10Hz 100Hz 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 15) Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 120W 25A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10V 100W 80W 60W 40W 20A 15A 10A 5A 20W 0W 25°C __ Icmax --- max. current limited by bondwire 0A 50°C 75°C 100°C 125°C 150°C 25°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) 4 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series IKB15N60T q 40A 40A 30A 35A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 35A 15V 25A 13V 11V 20A 9V 15A 7V 10A 5A V G E =20V 30A 15V 13V 25A 11V 20A 9V 15A 7V 10A 5A 0A 0A 0V 1V 2V 3V 0V VCE, COLLECTOR-EMITTER VOLTAGE VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE IC, COLLECTOR CURRENT 30A 25A 20A 15A 10A T J =175°C 25°C 0A 2V 4V 6V 8V 2.5V IC =30A 2.0V 1.5V I C =15A 1.0V IC =7.5A 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 3V Figure 6. Typical output characteristic (Tj = 175°C) 35A 0V 2V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 5A 1V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series IKB15N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns 100ns tf tr t d(on) tr 1ns 10ns 0A 5A 10A 15A 20A  25A IC, COLLECTOR CURRENT     RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG=15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA) 6 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series *) E on and E ts include losses 1.6m J *) E on and E ts include losses 1.6 m J due to diode recovery due to diode recovery E ts * 1.2m J E off 0.8m J E on * 0.4m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES IKB15N60T q E ts * 1.4 m J 1.2 m J 1.0 m J 0.8 m J 0.6 m J E off 0.4 m J E on * 0.0m J 0A 5A 10A 15A 20A 25A 0.2 m J          IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) 0.9m J 1.2m J *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0.7m J 0.6m J E ts * 0.5m J 0.4m J E off 0.3m J E on * 0.2m J 25°C due to diode recovery 1.0m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 0.8m J 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * 0.0m J 300V 50°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 350V 400V 450V 75°C 100°C 125°C 150°C VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) 7 Rev. 2.8 11.05.2015 TRENCHSTOP™ Series IKB15N60T q 1nF 15V 120V 480V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 10V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 60nC 80nC 100nC 10pF QGE, GATE CHARGE 0V 10V 20V 30V 40V 50V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge (IC=15 A) Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax