IKB10N60TATMA1

TRENCHSTOP™ Series IKB10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKB10N60T C G E PG-TO263-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 10A 1.5V 175C K10T60 PG-TO263-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 24 Unit V DC collector current, limited by Tjmax TC = 25C 18 TC = 100C Pulsed collector current, tp limited by Tjmax ICpul s 30 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 30 Diode forward current, limited by Tjmax TC = 25C TC = 100C IF 24 18 Diode pulsed current, tp limited by Tjmax IFpul s 30 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 110 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C Soldering temperature (reflow soldering, MSL1) 1 2) A C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.6 11.05.2015 TRENCHSTOP™ Series IKB10N60T p Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.35 K/W RthJCD 1.9 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case RthJA Thermal resistance, junction – ambient Footprint 65 6cm² Cu 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.8 - T j =2 5 C - 1.6 2.0 T j =1 7 5 C - 1.6 - 4.1 4.6 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 10 A V G E = 0V , I F = 1 0 A Gate-emitter threshold voltage VGE(th) I C = 0. 3m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 10 A - 6 - S Integrated gate resistor RGint Ω none Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 551 - Output capacitance Coss V G E = 0V , - 40 - Reverse transfer capacitance Crss f= 1 MH z - 17 - Gate charge QGate V C C = 48 0 V, I C =1 0 A - 62 - nC - 7 - nH - 100 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j = 25  C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.6 11.05.2015 TRENCHSTOP™ Series IKB10N60T p Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 12 - - 8 - - 215 - - 38 - - 0.16 - - 0.27 - - 0.43 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L =60nH, C=40pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 115 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 0 A, - 0.38 - µC Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ s - 10 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 680 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. typ. max. - 10 - - 11 - - 233 - - 63 - - 0.26 - - 0.35 - - 0.61 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L =60nH, C=40pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 200 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 0 A, - 0.92 - µC Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ s - 13 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 390 - A/s IFAG IPC TD VLS 3 Rev. 2.6 11.05.2015 TRENCHSTOP™ Series IKB10N60T p t p =1µs T C =80°C 20A 15A T C =110°C 10A Ic 5A 0A 10Hz 5µs 10A 25A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 30A 20µs 100µs 1A 500µs 10ms Ic DC 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 23) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 120W 20A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100W 80W 60W 40W 15A 10A 5A 20W 0W 25°C 0A 50°C 75°C 100°C 125°C 150°C 25°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 4 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.6 11.05.2015 TRENCHSTOP™ Series 30A 30A 25A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 25A 15V 20A 12V 10V 15A 8V 6V 10A 5A V G E =20V 15V 20A 12V 10V 15A 8V 6V 10A 5A 0A 0A 0V 1V 2V 3V 4V 0V 25A 20A 15A 10A T J =175°C 5A 25°C 0A 0V 2V 4V 6V 8V 10V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IKB10N60T p 3,0V IC =20A 2,5V IC =10A 2,0V 1,5V I C =5A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 11.05.2015 TRENCHSTOP™ Series IKB10N60T p t d(off) t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf t d(on) 10ns tf t d(on) 10ns tr tr 1ns 1ns 0A 5A 10A 15A  20A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 23Ω, Dynamic test circuit in Figure E)     RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) 10ns tr VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V 4V m ax. typ. 5V m in. 3V 2V 1V 1ns 25°C 50°C 75°C 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, rG=23Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2.6 11.05.2015 IKB10N60T p TRENCHSTOP™ Series *) E on and E ts include losses 1,0m J 0,8m J E off 0,6m J 0,4m J E on * 0,2m J 0,8 m J 0,6 m J E off 0,4 m J E on * 0,2 m J 0,0 m J 0,0m J 0A 5A 10A E ts * due to diode recovery E ts * due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses  15A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 23Ω, Dynamic test circuit in Figure E)     RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E) *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0,6m J 0,5m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery E ts * 0,4m J 0,3m J E off 0,2m J 0,1m J E on * 0,8m J 0,6m J E ts * 0,4m J E off 0,2m J E on * 0,0m J 50°C 100°C 0,0m J 300V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, rG = 23Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 10A, rG = 23Ω, Dynamic test circuit in Figure E) 7 Rev. 2.6 11.05.2015 TRENCHSTOP™ Series IKB10N60T p 1nF VGE, GATE-EMITTER VOLTAGE C iss c, CAPACITANCE 15V 120V 480V 10V 100pF C oss 5V C rss 0V 0nC 10pF 20nC 40nC 60nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=10 A) 0V 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 150A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 125A 100A 75A 50A 25A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax