IRFS3107-7PPBF

IRFS3107-7PPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS(on) typ. D max. G ID ID (Package Limited) S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free 75V 2.1mΩ 2.6mΩ 260A 240A D S G S S S S D2Pak 7 Pin G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current c Avalanche Characteristics Single Pulse Avalanche Energy c Avalanche Current Repetitive Avalanche Energy W V/ns °C x x 10lb in (1.1N m) d f W/°C V 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw EAS (Thermally limited) IAR EAR A 370 2.5 ± 20 13 -55 to + 175 Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range e dv/dt TJ TSTG Units 260 190 240 1060 320 mJ See Fig. 14, 15, 22a, 22b, A mJ Thermal Resistance Symbol RθJC RθJA 1 Parameter jk Junction-to-Case Junction-to-Ambient (PCB Mount) ij www.irf.com © 2014 International Rectifier Typ. Max. Units ––– ––– 0.40 40 °C/W Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 75 ––– ––– 2.0 ––– ––– ––– ––– RG(int) Internal Gate Resistance ––– ––– ––– 0.083 ––– 2.1 2.6 ––– 4.0 ––– 20 ––– 250 ––– 100 ––– -100 2.1 ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mA mΩ VGS = 10V, ID = 160A V VDS = VGS, ID = 250µA µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V c f Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) g h 260 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 160 38 57 103 17 80 100 64 9200 850 400 1150 1500 ––– 240 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC Conditions VDS = 25V, ID = 160A ID = 160A VDS = 38V VGS = 10V ID = 160A, VDS =0V, VGS = 10V VDD = 49V ID = 160A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V VGS = 0V, VDS = 0V to 60V f ns f pF h g Diode Characteristics Symbol IS Parameter Continuous Source Current VSD trr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM c Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.026mH RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use above this value . ƒ ISD ≤ 160A, di/dt ≤ 1420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com © 2014 International Rectifier Min. Typ. Max. Units ––– ––– 260 ––– ––– 1060 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 160A, VGS = 0V VR = 64V, TJ = 25°C IF = 160A TJ = 125°C di/dt = 100A/µs TJ = 25°C f S ––– ––– 1.3 V ––– 52 ––– ns ––– 63 ––– ––– 110 ––– nC TJ = 125°C ––– 160 ––– ––– 3.8 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f … Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. ˆ Rθ is measured at TJ approximately 90°C. ‰ RθJC value shown is at time zero. Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF 1000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V BOTTOM 4.5V 100 100 4.5V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 25°C Tj = 175°C 10 10 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 2.5 T J = 175°C T J = 25°C 10 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 ID = 160A VGS = 10V 2.0 (Normalized) 100 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 1.5 1.0 0.5 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd VGS , Gate-to-Source Voltage (V) ID= 160A Coss = Cds + Cgd C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss 10000 Coss Crss 1000 100 12.0 VDS= 60V VDS= 38V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 www.irf.com © 2014 International Rectifier 0 25 50 75 100 125 150 175 200 225 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF 10000 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 1000 100 TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1 100µsec 100 10msec 1msec 10 DC 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.5 1.0 1.5 2.0 1 VSD, Source-to-Drain Voltage (V) ID, Drain Current (A) 250 200 150 100 50 0 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Limited By Package 75 95 Id = 5mA 90 85 80 75 70 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (°C) T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 3.5 EAS , Single Pulse Avalanche Energy (mJ) 1400 3.0 Energy (µJ) ID 28A 50A BOTTOM 160A TOP 1200 2.5 1000 2.0 1.5 1.0 0.5 0.0 800 600 400 200 0 -10 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 1000 VDS, Drain-to-Source Voltage (V) 300 50 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 10 www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 τJ 0.05 0.01 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 1E-005 τi (sec) 0.01083 0.00001 0.05878 0.000086 0.15777 0.001565 0.17478 0.011192 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (°C/W) R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse) 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 350 300 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 160A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF 30 4.0 3.5 3.0 IRR (A) VGS(th) , Gate threshold Voltage (V) 4.5 ID = 250µA ID = 1.0mA 2.5 20 TJ = 25°C TJ = 125°C 15 10 ID = 1.0A 2.0 25 IF = 106A V R = 64V 5 1.5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 T J , Temperature ( °C ) 600 800 1000 Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 30 1000 25 IF = 160A V R = 64V 20 TJ = 25°C TJ = 125°C IF = 106A V R = 64V 900 800 TJ = 25°C TJ = 125°C 700 Q RR (A) IRR (A) 400 diF /dt (A/µs) 15 10 600 500 400 300 5 200 0 100 0 200 400 600 800 1000 0 200 diF /dt (A/µs) 400 600 800 1000 diF /dt (A/µs) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt 1000 IF = 160A V R = 64V 900 TJ = 25°C TJ = 125°C 800 Q RR (A) 700 600 500 400 300 200 0 200 400 600 800 1000 diF /dt (A/µs) Fig. 20 - Typical Stored Charge vs. dif/dt 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF Driver Gate Drive D.U.T ƒ - ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01Ω tp I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V tf .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 24a. Gate Charge Test Circuit 7 www.irf.com © 2014 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 28, 2014 IRFS3107-7PPbF D2Pak - 7 Pin Part Marking Information 14 D2Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 28, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 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