IRFU3911PBF

PD - 95373A IRFR3911PbF IRFU3911PbF ® SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current RDS(on) max ID 0.115Ω 14A D-Pak IRFR3911 I-Pak IRFU3911 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 14 9.5 56 56 0.37 ± 20 7.1 -55 to + 175 A W W/°C V V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 2.7 50 110 °C/W Notes  through … are on page 10 www.irf.com 1 12/06/04 IRFR/U3911PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 0.115 Ω VGS = 10V, ID = 8.4A „ 4.0 V VDS = VGS, ID = 250µA 20 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 9.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 4.3 6.6 7.9 26 52 25 740 110 18 700 61 130 Max. Units Conditions ––– S VDS = 50V, ID = 8.4A 32 ID = 8.4A 6.5 nC VDS = 80V 9.9 VGS = 10V „ ––– VDD = 500V ––– I D = 8.4A ns ––– RG = 22Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 68 8.4 0.0056 mJ A mJ Diode Characteristics IS ISM VSD trr Q rr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 ––– ––– showing the A G integral reverse ––– ––– 56 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V „ ––– 86 ––– ns TJ = 25°C, IF = 8.4A ––– 290 ––– nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U3911PbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 4.5V 1 10 4.5V 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 0.1 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 100.00 I D = 14A 2.5 10.00 VDS = 15V 20µs PULSE WIDTH 1.00 3.0 5.0 7.0 9.0 11.0 13.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 15.0 2.0 (Normalized) T J = 175°C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) T J = 25°C 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3911PbF 10000 1000 Ciss Coss 100 Crss ID = 8.4A 7 5 2 0 10 1 10 0 100 10 15 20 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.00 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 5 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 T J = 175°C 10.00 T J = 25°C 1.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µsec 1msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 10msec 0.1 0.10 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 80V VDS = 50V VDS = 20V 10 VGS , Gate-to-Source Voltage (V) Coss = Cds + Cgd C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 2.0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3911PbF 15 VGS 12 ID , Drain Current (A) RD V DS D.U.T. RG + -VDD VGS 9 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit VDS 3 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC) 10 D = 0.50 1 Thermal Response 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3911PbF 120 15V ID DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) TOP 96 3.4A 5.9A 8.4A BOTTOM 72 48 24 0 25 50 75 100 125 150 175 ( °C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U3911PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3911PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECTIF IER LOGO Note: "P" in ass embly line position indicates "Lead-Free" IRFU120 12 916A 34 AS SEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IF IER LOGO IRFU120 12 ASS EMBLY LOT CODE 8 34 DATE CODE P = DESIGNATES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY SIT E CODE www.irf.com IRFR/U3911PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 ASS EMBLY LOT CODE www.irf.com 78 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY SIT E CODE 9 IRFR/U3911PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time ‚ Starting TJ = 25°C, L = 1.9mH RG = 25Ω, IAS = 8.4A. as Coss while VDS is rising from 0 to 80% VDSS ƒ ISD ≤ 8.4A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/