FVP18030IM3LSG1

FVP18030IM3LSG1 Sustain March 2007 FVP18030IM3LSG1 Sustain Features • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500Vrms/min. • Low leakge current due to using an insulated metal substrates PDP SPMTM General Description It is an advanced samart power module(SPMTM) that Fairchild has newly developed and designed to provide very compact and optimized performance for the sustaining circuit of PDP driving system. It contains HVICs, buffers and low-loss high speed IGBTs that are needed to compose the sustaining circuits. Under voltage lock-out protection function enhances the system reliabilty. The high speed built-in HVIC provides optocoupler-less single power supply IGBT gate driving capability that further reduce the overall system size of PDP and the buffer provides high current driving capability of IGBTs. Applications • Sustain Part of a PDP(Plasma display panel) Package Outlines Figure 1. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FVP18030IM3LSG1 Rev. A FVP18030IM3LSG1 Sustain Pin Configurations Top View Figure 2. 2 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin Name COML VINL VCCL VBL GL VSL IGND COMH VINH VCCH VBH GH VSH CH EH AH CL AL EL Low-side Signal Ground Low-side Signal Input Low-side Supply Voltage for HVIC Pin Descriptions Low-side Floating Supply Voltage for Buffer IC and IGBT Driving Low-side Gate Low-side Floating Ground for Buffer IC and IGBT Driving IMS Ground High-side Signal Ground High-side Signal Input High-side Supply Voltage for HVICg High-side Floating Supply Voltage for Buffer IC and IGBT Driving High-side Gate High-side Floating Ground for Buffer IC and IGBT Driving High-side IGBT Collector High-side IGBT Emitter High-side Diode Anode Low-side IGBT Collector Low-side Diode Anode Low-side IGBT Emitter 3 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Internal Equivalent Circuit and Input/Output Pins (Bottom View) (13) VSH (12) GH (11) VBH (14) CH HVIC (10) VCCH (9) VINH (8) COMH (7) IGND (16) AH (6) VSL (5) GL (4) VBL (17) CL HVIC (3) VCCL (2) VINL (1) COML VCC IN COM VB OUT VS VCC IN COM VB OUT VS Buffer IC VCC IN COM COM OUT (15) EH Buffer IC VCC IN COM COM OUT (18) AL (19) EL Figure 3. 4 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Absolute Maximum Ratings (T Symbol VCC VBS VIN C = 25°C, Unless Otherwise Specified) Parameter Control Supply Voltage Control Bias Voltage Input Signal Voltage Conditions Applied between VCCL-COML, VCCH - COMH Applied between VBL - VSL, VBH - VSH Applied between VINL-COML,VINH - COMH Rating 20 20 -0.3~17 Units V V V Symbol VCE VRRM VIN IC IF(AV) ICP IFP Notes : Parameter Collector to Emitter Voltage Peak Repetitive Reverse Voltage Conditions Between CL to EL, Between CH to EH VGH-EH=VGL-EL=0V , ICH=ICL=250µA Between CH to AH, Between CL to AL IAH=IAL=250µA VINL, VINH Between CL to EL, Between CH to EH Between CH to AH, Between CL to AL Between CL to EL, Between CH to EH (Note1) Between CH to AH, Between CL to AL (Note1) Rating 300 300 -0.3 to Vcc+0.3 180 10 450 100 Units V V V A A A A Input Signal Voltage Collector Current Continuous Average Rectified Forward Current Pulsed Collector Current Pulsed Diode Current 1. Pulse Width = 100µsec, Duty = 0.1; half sine wave *Icp limited by MAX Tj Symbol Parameter IGBT Dissipation Conditions Tc=25°C per IGBT Tc=100°C per IGBT Tc=25°C per diode Tc=100°C per diode Rating 167 67 34 14 -20 ~ 150 -20 ~ 125 -40 ~ 125 Units W W W W °C °C °C Vrms Pd FRD Dissipation Tj TC TSTG VISO Operating Junction Temperture Module Case Operation Temperature Storage Temperature Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to IMS substrate 1500 Thermal Resistance Symbol Rth(j-c) Parameter Junction to Case Thermal Resistance Conditions Between CH to EH, Between CL to EL per IGBT Between CH to AH, Between CL to AL per Diode Min. - Max. 0.75 3.70 Units °C/W °C/W 5 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Electrical Characteristics (T = 25°C, Unless Otherwise Specified) c Symbol IQCC IQBS UVBSD UVBSR VIN(ON) VIN(OFF) Parameter Quiescent VCC Supply Current Quiescent VBS Supply Current Supply Circuit Under Voltage Protection ON Threshold Voltage OFF Threshold Voltage Conditions VCC = 15V VINL, VINH = 0V VBS = 15V VINL, VINH= 0V Detection Level Reset Level Applied between VINL-COML, ,VINH - COMH VCCL-COML, VCCH-COMH VBL- VSL, VBH- VSH Min. 10.1 10.5 3.0 - Typ. 11.3 11.7 Max. 100 500 12.5 12.9 - Units µA µA V V V V - 0.8 Symbol VCE(SAT) VF tdON tr tdOFF tF ICES IR Notes : Parameter IGBT Collector-Emitter Saturation Voltage Diode Forward Voltage Condition VCC = VBS = 15V VIN = 5V VIN = 0V IC = 40A, TJ = 25°C IC = 180A, TJ = 25°C IC =10A, TJ = 25°C Min. - Typ. 1.9 230 54 260 108 - Max. 1.4 1.4 250 250 Units V V V ns ns ns ns µA µA Switching Times VCE=200V, VCC= VBS=15V Ic = 20A VIN = 0V ↔ 5V , Inductive Load Tc = 25°C (Note2) Collector-Emitter Leakage Current Diode Anode-Cathode Leakage Current VCE = 300V Between EH to CH Between EL to CL VAnode-Cathode=300V 2. tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4. VIN VIN td(off) tf 90% of IC VCE 90% of IC IC IC td(on) 10% of IC VCE tr 10% of Ic Figure 4. Switching Time Definition 6 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Typical Performance Characteristics Figure 5. Typical Output Characteristics Figure 6. Typical Output Characteristics 300 TC = 25 C 250 o 2 0V 15V 10V 300 T C = 1 25 C 250 o 2 0V 15V 12V 10V Collector Current, IC [A] 200 Collector Current, IC [A] 12V 200 150 150 100 V GE = 8 V 50 100 V GE = 8 V 50 0 0 2 4 6 0 0 2 4 6 Collector-Emitter Voltage, V C E [V] Collector-Emitter Voltage, V CE [ V] Figure 7. Typical Forward Voltage Drop 100 Between CL to AL Between CH to EH Figure 8. Typical Forward Voltage Drop Ic MAX (Pulsed) 50µs 100µs 1ms Collector Current, Ic [A] FORWARD CURRENT, IF [A] TC = 125 C TC = 25 C 10 o o 100 TC = 75 C o 10 1 1 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 FORWARD VOLTAGE. VF [V] Collector-Emitter Voltage, VCE [V] 7 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Mechanical Characteristics and Ratings Parameter Mounting Torque Device Flatness Weight Mounting Screw: - M3 Conditions Recommended 0.62N•m Note Figure 5 Limits Min. 0.51 0 - Typ. 0.62 13.4 Max. 0.72 +100 - Units N•m µm g (+) Figure 9. Flatness Measurement Position (+) 8 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Detailed Package Outline Drawings Figure 10. 9 FVP18030IM3LSG1 Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I24 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com