S1B

S1A-S1M S1A - S1M Features • • Low profile package. Glass passivated junction. SMA/DO-214AC COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM Tstg TJ TA = 25°C unless otherwise noted Parameter 1A Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA = 100°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 1B 100 1D 200 Value 1G 400 1.0 40 -55 to +150 -55 to +150 1J 600 1K 1M 800 1000 Units V A A °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD RθJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient* Value 1.4 85 Units W °C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol VF trr IR CT TA = 25°C unless otherwise noted Parameter 1A Forward Voltage @ 1.0 A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 125°C Total Capacitance VR = 4.0 V, f = 1.0 MHz 1B 1D Device 1G 1.1 1.8 1.0 50 12 1J 1K 1M Units V µs µA µA pF 2001 Fairchild Semiconductor Corporation S 1A-S1M, Rev. C1. Aug 2006 S1A-S1M General Purpose Rectifiers (continued) Typical Characteristics Average Rectified Forward Current, IF [A] 2 Forward Current, IF [A] 1 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.315x0.315" (8.0x8.0mm) COPPER PAD AREAS 100 10 1 0.1 0 0 25 50 75 100 125 Lead Temperature [ºC] 150 175 0.01 0.6 0.8 Figure 1. Forward Current Derating Curve 1 1.2 1.4 Forward Voltage, VF [V] 1.6 1.8 Figure 2. Forward Voltage Characteristics Peak Forward Surge Current, IFSM [A] 30 25 20 15 10 5 0 Reverse Current, IR [uA] 8.3ms Single Half Sine-Wave JEDEC Method 100 10 T J = 125ºC 1 T J = 75ºC 0.1 T J = 25ºC 0.01 1 2 5 10 20 Number of Cycles at 60Hz 50 100 0.001 0 20 40 60 80 100 Reverse Voltage, VR[V] 120 140 Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage Transient Thermal Impedance [ºC/W] 100 Total Capacitance, CT [pF] 50 T J = 25º C f = 1.0 MHz Vsig = 50mV p-p 100 Units Mounted On 20"x 20"(5.4mm 2 )+0.5mil Thick Copper Land Areas 50 inches(0.013mm) 10 5 10 5 1 0.01 0.1 1 10 Reverse Voltage, VR [V] 100 1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics 2001 Fairchild Semiconductor Corporation S 1A-S1M, Rev. C1. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20