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LMA422

LMA422

  • 厂商:

    FILTRONIC

  • 封装:

  • 描述:

    LMA422 - LOW NOISE PHEMT MMIC - Filtronic Compound Semiconductors

  • 数据手册
  • 价格&库存
LMA422 数据手册
LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ 26 GHz to 30 GHz Frequency Band 3.0 dB Noise Figure 22 dB Gain 5 dBm Output Power at Saturation +3 V Single Bias Supply LMA422 • DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA422 is a low noise PHEMT amplifier that operates from 26 to 30GHz. This 3-stage reactively matched amplifier provides 22 dB nominal gain with 3dB typical noise figure and saturated power output of +5dBm. The LMA422 is designed for commercial LMDS (Local Multipoint Distribution Services) and Ka-band applications. Ground is provided to the circuitry through vias to the backside metallization. • ELECTRICAL SPECIFICATIONS @ TAmbient = 2 5 ° C (VDD = +3.0V, ZIN = ZOUT = 50Ω ) Parameter Frequency Band Small Signal Gain Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation Symbol F S21 ∆S21 NF S11 S22 S12 IDS = 40 mA, Typ. Test Conditions Min 26 18 22 ±1.0 3.0 -12 -12 -45 ±1.5 4.5 Typ Max 30 Units GHz dB dB dB dB dB dB Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 12/05/00 Email: sales@filss.com LOW NOISE PHEMT MMIC • ABSOLUTE MAXIMUM RATINGS Parameter Drain Voltage Operating Current RF Input Power Total Power Dissipation Channel Operating Temperature Storage Temperature Maximum Assembly Temperature (1 min. max.) Notes: • • • Symbol VD IOP PIN PTOT TCH TSTG TMAX Test Conditions TAmbient = 22 ± 3 ° C TAmbient = 22 ± 3 ° C TAmbient = 22 ± 3 ° C TAmbient = 22 ± 3 ° C TAmbient = 22 ± 3 ° C — — 0 Min Max 4 90 -15 0.4 150 85 300 Units V mA dBm W ºC ºC ºC LMA422 • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Recommended Continuous Operating Limits should be observed for reliable device operation. Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 12/05/00 Email: sales@filss.com LOW NOISE PHEMT MMIC • ASSEMBLY DRAWING LMA422 Notes: • • • • Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. Bond on bond or stitch bond acceptable. Conductor over conductor acceptable. Conductors must not short. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 12/05/00 Email: sales@filss.com LOW NOISE PHEMT MMIC • MECHANICAL OUTLINE LMA422 Notes: • • • • All units are in microns (µm). All bond pads are 100 X 100 µm 2 . Bias pad (VDD ) size is 100 X 121.5 µm 2 . Unless otherwise specified. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 12/05/00 Email: sales@filss.com
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