MRFG35003M6T1_06

Freescale Semiconductor Technical Data Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRFG35003M6T1 Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% • 3 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35003M6T1 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT ARCHIVE INFORMATION CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 8 22.7 0.15 (2) -5 24 - 65 to +150 175 - 20 to +85 (2) Unit Vdc W W/°C Vdc dBm °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 6.6 (2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRFG35003M6T1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 20 Vdc, VGS = - 2.5 Vdc) Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 6 Vdc, IDQ = 180 mA) Power Gain (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz. Tune for Maximum Pout) Adjacent Channel Power Ratio (VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min — — — — - 1.2 - 1.1 8 — 22 Typ 2.9 < 1.0 0.02 1.0 - 1.0 - 0.9 9 3 24 Max — 100 1.0 15 - 0.7 - 0.7 — — — Unit Adc μAdc mAdc mAdc Vdc Vdc dB W % ARCHIVE INFORMATION ACPR — - 42 - 38 dBc MRFG35003M6T1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VGS VDD=6.0 C11 C10 C9 C8 C7 C6 C5 R1 C3 C4 C16 C17 C18 C19 C20 C21 C22 C14 C15 Z5 RF INPUT Z1 Z2 C1 C28 C27 C26 C2 Z3 Z4 Z6 C12 Z7 Z8 C13 Z9 Z10 C23 Z11 Z12 Z13 C24 C25 Z14 RF OUTPUT ARCHIVE INFORMATION Z1, Z14 Z2 Z3 Z4 Z5, Z10 Z6 Z7 0.044″ x 0.125″ Microstrip 0.440″ x 0.105″ Microstrip 0.340″ x 0.357″ Microstrip 0.380″ x 0.426″ Microstrip 0.527″ x 0.015″ Microstrip 0.027″ x 0.347″ Microstrip 0.538″ x 0.115″ Microstrip Z8 Z9 Z11 Z12 Z13 PCB 0.439″ x 0.136″ Microstrip 0.062″ x 0.280″ Microstrip 0.349″ x 0.302″ Microstrip 0.055″ x 0.130″ Microstrip 0.044″ x 0.502″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Designation C1 C2 C3, C4, C14, C15 C5, C16 C6, C17 C7, C18 C8, C19 C9, C20 C10, C21 C11, C22 C12, C13, C26, C27 C23, C25, C28 C24 R1 12 pF Chip Capacitor, ATC 0.1 pF Chip Capacitor (0805), AVX 3.9 pF Chip Capacitors (0805), AVX 10 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 1000 pF Chip Capacitors, ATC 3.9 μF Chip Capacitors, ATC 0.1 μF Chip Capacitors, ATC 22 μF, 35 V Tantalum Surface Mount Capacitor, Newark 0.3 pF Chip Capacitors (0805), AVX 1.0 pF Chip Capacitors (0805), AVX 7.5 pF Chip Capacitor, ATC 50 W Chip Resistor, Newark Description MRFG35003M6T1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION C7 C6 + C11 R1 C4 C10 C9 C8 C5 C17 C16 C14 C18 + C19 C20 C21 C22 C3 C15 ARCHIVE INFORMATION C13 C23 C2 C1 C24 C28 C27 C26 C25 MRFG35003M6 Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35003M6T1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION C12 TYPICAL CHARACTERISTICS 0 IRL, INPUT RETURN LOSS (dB) −10 −20 −30 −40 −50 −60 ACPR IRL 0 −10 −20 −30 −40 −50 −60 Pout, OUTPUT POWER (WATTS) ACPR (dBc) VDS = 6 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_ ARCHIVE INFORMATION Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 12 11.5 G T , TRANSDUCER GAIN (dB) 11 GT 40 PAE, POWER ADDED EFFICIENCY (%) 35 30 25 20 15 PAE VDS = 6 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_ 1 Pout, OUTPUT POWER (WATTS) 10 5 0 0.1 10.5 10 9.5 9 8.5 8 Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35003M6T1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 0.1 1 Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA f GHz 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 S11 |S11| 0.954 0.953 0.952 0.952 0.952 0.951 0.952 0.952 0.951 0.951 0.952 0.951 0.951 0.951 0.951 0.950 0.951 0.946 0.952 0.949 0.949 0.948 0.947 0.950 0.951 0.950 0.950 0.952 0.951 0.950 0.952 0.951 0.951 0.952 0.952 0.952 0.952 0.953 0.951 0.952 0.952 0.950 0.949 0.950 0.949 0.946 ∠φ - 176.79 - 177.98 - 179.13 179.80 178.89 177.96 177.03 176.22 175.46 174.66 173.92 173.18 172.40 171.63 170.90 170.06 169.23 168.58 167.47 166.77 163.72 162.94 162.21 161.60 160.97 160.44 159.95 159.46 159.01 158.58 158.25 157.84 157.48 157.17 156.89 156.63 156.35 155.98 155.66 155.28 154.86 154.44 153.93 153.36 152.82 152.08 |S21| 3.859 3.527 3.250 3.019 2.818 2.643 2.491 2.354 2.234 2.124 2.025 1.934 1.851 1.774 1.704 1.638 1.576 1.518 1.463 1.411 1.360 1.317 1.276 1.237 1.201 1.167 1.135 1.105 1.076 1.049 1.024 1.000 0.979 0.959 0.939 0.921 0.904 0.888 0.873 0.860 0.848 0.836 0.826 0.815 0.806 0.797 S21 ∠φ 84.89 83.61 82.29 80.95 79.74 78.49 77.11 75.85 74.67 73.38 72.17 70.97 69.68 68.46 67.25 65.98 64.74 63.62 62.45 61.29 60.14 59.12 58.03 56.92 55.93 54.89 53.83 52.85 51.92 50.84 49.95 49.06 48.17 47.22 46.34 45.44 44.48 43.57 42.68 41.72 40.82 39.90 38.89 37.85 36.81 35.75 |S12| 0.016 0.016 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.021 0.021 0.022 0.022 S12 ∠φ 9.07 8.90 8.49 8.44 8.51 8.53 8.75 8.61 8.62 8.56 8.48 8.47 8.93 8.90 8.79 8.80 8.44 8.76 9.00 8.57 8.15 8.28 8.51 8.31 8.40 8.35 8.44 8.61 8.34 7.93 8.02 7.86 7.67 7.24 6.89 6.73 6.86 6.83 6.80 6.74 6.73 6.72 6.86 6.74 6.24 5.69 |S22| 0.847 0.846 0.846 0.845 0.844 0.844 0.843 0.842 0.842 0.841 0.841 0.841 0.841 0.840 0.841 0.841 0.840 0.838 0.845 0.841 0.842 0.843 0.843 0.843 0.844 0.844 0.844 0.843 0.844 0.843 0.843 0.844 0.845 0.843 0.843 0.844 0.843 0.842 0.842 0.842 0.840 0.841 0.840 0.838 0.838 0.839 S22 ∠φ 178.96 178.38 177.74 177.07 176.28 175.55 174.77 173.93 173.12 172.27 170.50 169.75 168.89 168.10 167.34 166.61 166.13 165.24 164.98 166.78 166.27 165.71 165.16 164.60 164.10 163.47 162.87 162.37 161.77 161.24 160.75 160.26 159.69 159.08 158.58 158.07 157.42 156.97 156.47 155.83 155.29 154.74 154.18 153.62 153.16 171.37 ARCHIVE INFORMATION MRFG35003M6T1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA (continued) f GHz 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 4.35 4.4 4.45 4.5 4.55 4.6 4.65 4.7 4.75 4.8 4.85 4.9 4.95 5 S11 |S11| 0.946 0.946 0.945 0.945 0.945 0.944 0.943 0.943 0.944 0.941 0.941 0.941 0.940 0.939 0.940 0.940 0.939 0.941 0.939 0.939 0.939 0.940 0.939 0.940 0.941 0.941 0.942 0.942 0.941 0.940 0.941 0.941 0.939 0.939 0.939 0.938 0.938 0.938 0.937 0.935 0.935 0.934 0.932 0.932 0.929 ∠φ 151.55 150.81 150.11 149.30 148.44 147.58 146.55 145.54 144.52 143.47 142.43 141.33 140.22 139.25 138.09 137.05 136.07 135.06 134.20 133.35 132.47 131.67 130.89 130.26 129.57 128.98 128.44 128.03 127.57 127.14 126.75 126.39 125.97 125.64 125.36 124.98 124.55 124.20 123.76 123.17 122.58 121.93 121.14 120.43 119.55 |S21| 0.787 0.778 0.770 0.762 0.754 0.747 0.739 0.732 0.725 0.718 0.711 0.704 0.697 0.689 0.682 0.675 0.668 0.661 0.653 0.646 0.639 0.632 0.625 0.619 0.613 0.608 0.602 0.598 0.593 0.589 0.585 0.581 0.578 0.575 0.573 0.571 0.570 0.571 0.570 0.569 0.569 0.570 0.570 0.571 0.573 S21 ∠φ 34.63 33.54 32.46 31.37 30.25 29.09 27.89 26.69 25.53 24.33 23.09 21.89 20.67 19.44 18.26 17.08 15.88 14.68 13.50 12.39 11.29 10.20 9.15 8.10 7.10 6.11 5.10 4.14 3.17 2.15 1.21 0.25 - 0.74 - 1.67 - 2.59 - 3.50 - 4.53 - 5.52 - 6.60 - 7.76 - 8.89 - 9.98 - 11.17 - 12.37 - 13.61 |S12| 0.022 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.025 0.025 0.025 0.025 0.025 0.025 0.025 0.025 0.025 0.026 0.026 0.026 0.027 0.027 0.027 0.027 0.028 0.028 0.029 0.029 0.030 0.030 0.031 0.031 0.031 0.031 0.032 0.032 0.032 S12 ∠φ 4.64 3.61 2.16 1.54 1.03 0.48 0.15 - 0.33 - 0.41 - 0.52 - 1.22 - 1.40 - 1.31 - 1.58 - 1.85 - 2.29 - 2.75 - 3.55 - 4.69 - 5.45 - 6.34 - 6.85 - 6.90 - 6.60 - 6.63 - 6.67 - 7.00 - 7.30 - 7.73 - 8.12 - 8.11 - 8.33 - 8.73 - 8.92 - 9.42 - 9.66 - 10.28 - 10.87 - 11.91 - 13.22 - 14.16 - 14.45 - 14.82 - 14.82 - 14.83 |S22| 0.836 0.836 0.837 0.835 0.835 0.837 0.835 0.834 0.836 0.835 0.834 0.834 0.834 0.832 0.833 0.834 0.832 0.831 0.832 0.831 0.830 0.831 0.831 0.830 0.830 0.831 0.830 0.828 0.828 0.827 0.826 0.826 0.825 0.823 0.823 0.823 0.822 0.821 0.821 0.819 0.817 0.817 0.816 0.815 0.815 S22 ∠φ 152.55 152.02 151.54 150.98 150.40 149.89 149.35 148.72 148.13 147.62 146.44 145.89 145.40 144.66 144.11 143.59 142.91 142.34 141.92 141.27 140.64 140.02 139.40 138.76 138.17 137.56 136.87 136.20 135.56 134.85 134.13 133.44 132.68 131.92 131.23 130.45 129.60 128.79 127.98 127.09 126.23 125.41 124.46 123.55 147.01 ARCHIVE INFORMATION MRFG35003M6T1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION NOTES MRFG35003M6T1 8 RF Device Data Freescale Semiconductor NOTES MRFG35003M6T1 RF Device Data Freescale Semiconductor 9 NOTES MRFG35003M6T1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W G RF Device Data Freescale Semiconductor ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉÉ ÉÉÉÉÉÉ É ÉÉÉÉÉÉ É ÉÉÉÉÉÉ É 1 3 ZONE X 2 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE S VIEW Y - Y CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC MRFG35003M6T1 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35003M6T1 1Rev. 4, 1/2006 2 Document Number: MRFG35003M6T1 RF Device Data Freescale Semiconductor