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MRFG35003ANR5

MRFG35003ANR5

  • 厂商:

    NXP(恩智浦)

  • 封装:

    PLD-1.5

  • 描述:

    RF Mosfet pHEMT FET 12V 55mA 3.55GHz 10.8dB 3W PLD-1.5

  • 数据手册
  • 价格&库存
MRFG35003ANR5 数据手册
Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25% • 3 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit VDSS 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 8.1 (2) 0.05 (2) W W/°C Gate - Source Voltage VGS -5 Vdc RF Input Power Pin 29 dBm Tstg - 65 to +150 °C Tch 175 °C TC - 20 to +85 °C Symbol Value Unit Drain - Source Voltage Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class AB RθJC 18.5 (2) ARCHIVE INFORMATION ARCHIVE INFORMATION RF Power Field Effect Transistor °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFG35003NT1 1 ARCHIVE INFORMATION Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 1.3 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS — < 1.0 100 μAdc Off State Drain Current (VDS = 12 Vdc, VGS = - 2.5 Vdc) IDSO — — 450 μAdc Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) IDSX — < 1.0 7 mAdc Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 6.5 mA) VGS(th) - 1.2 - 0.9 - 0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, ID = 55 mA) VGS(Q) - 1.2 - 0.9 - 0.7 Vdc Power Gain (VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz) Gps 10 11.5 — dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz) P1dB — 3 — W hD 23 25 — % ACPR — - 42 - 40 dBc Drain Efficiency (VDD = 12 Vdc, IDQ = 55 mA, Pout = 0.30 W Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 0.30 W Avg., IDQ = 55 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRFG35003NT1 2 RF Device Data Freescale Semiconductor VGS VDD C10 C9 C8 C7 C6 C5 C4 C13 C14 C15 C16 C17 C18 C19 R1 C2 C3 C11 C12 RF INPUT C21 Z1 ARCHIVE INFORMATION Z15 Z2 Z3 C22 Z4 Z6 Z7 Z8 Z9 Z10 Z11 C23 Z12 Z13 Z14 Z16 RF OUTPUT C24 Z17 C1 Z18 C20 C28 Z1, Z18 Z2 Z3 Z4 Z5, Z15 Z6, Z8, Z10 Z7, Z9 0.125″ 0.409″ 0.326″ 0.333″ 0.527″ 0.050″ 0.097″ C27 x 0.044″ Microstrip x 0.044″ Microstrip x 0.288″ Microstrip x 0.572″ Microstrip x 0.015″ Microstrip x 0.025″ Microstrip x 0.025″ Microstrip C26 Z11 Z12 Z13 Z14 Z16 Z17 PCB C25 0.082″ x 0.372″ Microstrip 0.169″ x 0.471″ Microstrip 0.196″ x 0.093″ Microstrip 0.313″ x 0.338″ Microstrip 0.200″ x 0.065″ Microstrip 0.472″ x 0.044″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C20 7.5 pF Chip Capacitors 100A7R5JP150X ATC C2, C3, C11, C12 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AVX C4, C13 10 pF Chip Capacitors 100A100JP500X ATC C5, C14 100 pF Chip Capacitors 100A101JP500X ATC C6, C15 100 pF Chip Capacitors 100B101JP500X ATC C7, C16 1000 pF Chip Capacitors 100B102JP500X ATC C8, C17 3.9 μF Chip Capacitors ATC C9, C18 0.1 μF Chip Capacitors ATC C10, C19 22 μF, 35 V Tantalum Surface Mount Capacitors C21 0.7 pF Chip Capacitor (0805) 08051J0R7BBT AVX C22, C27 0.2 pF Chip Capacitors (0805) 08051J0R2BBT AVX C23, C28 0.8 pF Chip Capacitors (0805) 08051J0R8BBT AVX C24 1.0 pF Chip Capacitor 08051J1R0BBT AVX C25 1.2 pF Chip Capacitor 08051J1R2BBT AVX C26 0.5 pF Chip Capacitor 08051J0R5BBT AVX R1 100 W Chip Resistor ATC ARCHIVE INFORMATION Z5 Newark MRFG35003NT1 RF Device Data Freescale Semiconductor 3 C6 C15 C5 C9 C8 C4 C7 C10 C14 R1 C17 C16 C18 C19 C13 C3 C11 ARCHIVE INFORMATION C21 C22 C12 C23 C24 C1 C20 C25 C28 C27 C26 MRFG35003M Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout ARCHIVE INFORMATION C2 MRFG35003NT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 −10 −10 IRL −20 −20 VDS = 12 Vdc, IDQ = 50 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.813é−106.27_, ΓL = 0.734é−142.65_ −30 −30 −40 −40 ACPR −50 −50 −60 0.01 0.1 1 Pout, OUTPUT POWER (WATTS) Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 16 14 VDS = 12 Vdc, IDQ = 50 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.813é−106.27_, ΓL = 0.734é−142.65_ 45 40 PAE 35 GT 12 30 10 25 8 20 6 15 4 10 2 PAE, POWER ADDED EFFICIENCY (%) G T , TRANSDUCER GAIN (dB) 18 5 0.01 0.1 1 Pout, OUTPUT POWER (WATTS) Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. ARCHIVE INFORMATION −60 ARCHIVE INFORMATION ACPR (dBc) IRL, INPUT RETURN LOSS (dB) 0 MRFG35003NT1 RF Device Data Freescale Semiconductor 5 S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.50 0.879 - 160.58 8.644 88.22 0.038 6.94 0.520 - 161.47 0.55 0.879 - 163.33 7.924 85.88 0.039 5.42 0.520 - 163.29 0.60 0.877 - 166.03 7.317 83.57 0.039 3.80 0.520 - 165.21 0.65 0.876 - 168.54 6.811 81.29 0.039 2.37 0.520 - 167.01 0.70 0.877 - 170.64 6.380 79.13 0.039 0.94 0.521 - 168.58 0.75 0.875 - 172.68 5.988 77.06 0.039 - 0.41 0.520 - 170.13 0.80 0.877 - 174.56 5.653 75.00 0.040 - 1.67 0.520 - 171.60 0.85 0.876 - 176.25 5.310 72.83 0.040 - 2.81 0.520 - 172.89 0.90 0.874 - 177.90 5.058 71.00 0.040 - 4.01 0.519 - 174.37 0.95 0.875 - 179.54 4.825 69.08 0.040 - 5.15 0.520 - 175.84 1.00 0.876 179.00 4.608 67.27 0.040 - 6.31 0.520 - 177.05 1.05 0.875 177.53 4.411 65.38 0.040 - 7.28 0.519 - 178.37 1.10 0.874 176.04 4.224 63.51 0.040 - 8.43 0.520 - 179.67 1.15 0.875 174.55 4.056 61.69 0.040 - 9.47 0.521 179.15 1.20 0.874 173.13 3.894 59.88 0.040 - 10.47 0.520 177.91 1.25 0.873 171.63 3.743 58.01 0.040 - 11.78 0.521 176.52 1.30 0.876 170.20 3.609 56.26 0.040 - 12.79 0.522 175.56 1.35 0.871 168.97 3.479 54.57 0.040 - 13.72 0.520 174.80 1.40 0.878 167.17 3.355 52.76 0.040 - 14.65 0.526 173.34 1.45 0.876 165.98 3.237 51.14 0.040 - 15.48 0.526 172.88 1.50 0.874 162.45 3.118 49.25 0.040 - 16.80 0.528 174.64 1.55 0.874 161.17 3.024 47.67 0.040 - 17.76 0.529 173.65 1.60 0.874 160.09 2.929 46.14 0.040 - 18.51 0.530 172.88 1.65 0.876 159.00 2.848 44.54 0.040 - 19.27 0.530 172.31 1.70 0.878 157.85 2.767 42.99 0.039 - 20.03 0.531 171.29 1.75 0.878 156.84 2.690 41.32 0.039 - 20.89 0.533 170.58 1.80 0.878 155.94 2.625 39.82 0.039 - 21.53 0.533 170.03 1.85 0.880 154.93 2.557 38.21 0.039 - 22.22 0.533 168.95 1.90 0.879 154.05 2.492 36.74 0.039 - 23.01 0.536 168.19 1.95 0.879 153.24 2.434 35.28 0.039 - 23.74 0.535 167.63 2.00 0.881 152.32 2.379 33.68 0.039 - 24.55 0.535 166.68 2.05 0.881 151.56 2.325 32.27 0.040 - 25.32 0.538 165.91 2.10 0.880 150.85 2.279 30.90 0.040 - 25.97 0.539 165.46 2.15 0.881 149.96 2.236 29.41 0.040 - 26.76 0.537 164.56 2.20 0.881 149.27 2.191 27.93 0.040 - 27.75 0.539 163.66 2.25 0.880 148.61 2.151 26.53 0.040 - 28.56 0.541 163.24 2.30 0.880 147.74 2.121 24.99 0.040 - 29.32 0.539 162.46 2.35 0.881 146.91 2.084 23.54 0.040 - 29.95 0.539 161.41 2.40 0.879 146.12 2.051 22.12 0.040 - 30.72 0.540 160.97 2.45 0.877 145.07 2.023 20.46 0.040 - 31.44 0.539 160.26 2.50 0.876 144.07 1.992 18.93 0.040 - 32.36 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56 2.60 0.873 142.10 1.948 15.95 0.041 - 33.58 0.538 157.90 2.65 0.872 140.88 1.924 14.31 0.041 - 34.41 0.538 156.83 2.70 0.872 139.83 1.901 12.69 0.041 - 35.22 0.538 156.16 2.75 0.867 138.60 1.882 11.19 0.042 - 36.04 0.537 155.70 2.80 0.868 137.26 1.864 9.40 0.042 - 37.16 0.535 154.59 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 50 mA MRFG35003NT1 6 RF Device Data Freescale Semiconductor S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2.85 0.868 136.03 1.845 7.80 0.043 - 38.56 0.537 153.86 2.90 0.866 134.67 1.828 6.20 0.043 - 39.94 0.536 153.32 2.95 0.866 133.02 1.812 4.39 0.043 - 41.41 0.534 152.08 3.00 0.868 131.47 1.795 2.53 0.043 - 42.49 0.536 151.08 3.05 0.865 129.99 1.780 0.80 0.043 - 43.57 0.535 150.49 3.10 0.864 128.11 1.766 - 1.00 0.043 - 44.68 0.532 149.20 3.15 0.865 126.39 1.745 - 2.87 0.043 - 45.67 0.533 148.09 3.20 0.864 124.86 1.728 - 4.58 0.043 - 46.62 0.533 147.42 3.25 0.861 122.97 1.714 - 6.48 0.043 - 47.78 0.531 146.29 3.30 0.863 121.30 1.697 - 8.33 0.043 - 49.02 0.532 145.13 3.35 0.862 119.77 1.681 - 9.97 0.043 - 49.91 0.532 144.52 3.40 0.860 117.84 1.665 - 11.83 0.043 - 50.93 0.529 143.46 3.45 0.862 116.26 1.648 - 13.70 0.043 - 51.73 0.529 142.35 3.50 0.861 114.65 1.630 - 15.43 0.043 - 52.55 0.530 141.50 3.55 0.860 112.77 1.620 - 17.24 0.044 - 53.64 0.527 140.51 3.60 0.862 111.19 1.602 - 18.99 0.044 - 54.74 0.525 139.19 3.65 0.861 109.76 1.584 - 20.65 0.044 - 55.56 0.525 138.23 3.70 0.860 108.08 1.572 - 22.49 0.044 - 56.84 0.524 137.30 3.75 0.861 106.70 1.557 - 24.18 0.044 - 58.11 0.523 136.00 3.80 0.862 105.31 1.544 - 25.86 0.044 - 59.31 0.524 134.95 3.85 0.862 103.85 1.533 - 27.47 0.044 - 60.49 0.523 134.13 3.90 0.861 102.50 1.519 - 29.14 0.044 - 61.50 0.521 132.71 3.95 0.862 101.16 1.508 - 30.97 0.044 - 62.41 0.522 131.61 4.00 0.861 99.84 1.499 - 32.49 0.044 - 63.14 0.520 130.97 4.05 0.861 98.44 1.494 - 34.26 0.044 - 64.07 0.518 129.57 4.10 0.861 97.12 1.482 - 35.96 0.044 - 64.91 0.518 128.23 4.15 0.859 96.07 1.474 - 37.51 0.045 - 65.77 0.515 127.49 4.20 0.858 94.61 1.471 - 39.42 0.045 - 67.06 0.512 125.93 4.25 0.859 93.26 1.463 - 41.19 0.045 - 68.21 0.512 124.32 4.30 0.859 92.06 1.458 - 42.86 0.045 - 69.40 0.511 123.47 4.35 0.857 90.72 1.457 - 44.58 0.046 - 70.54 0.507 122.03 4.40 0.857 89.22 1.450 - 46.51 0.046 - 71.95 0.508 120.25 4.45 0.855 87.99 1.446 - 48.27 0.046 - 73.34 0.508 119.27 4.50 0.855 86.49 1.453 - 50.09 0.047 - 74.58 0.504 117.72 4.55 0.855 84.61 1.448 - 52.14 0.046 - 75.92 0.503 115.65 4.60 0.854 83.10 1.449 - 53.98 0.047 - 76.82 0.501 114.46 4.65 0.853 81.10 1.454 - 56.16 0.047 - 78.14 0.495 112.83 4.70 0.851 78.94 1.450 - 58.44 0.048 - 79.84 0.492 110.59 4.75 0.851 77.09 1.450 - 60.56 0.048 - 81.55 0.491 109.01 4.80 0.848 74.85 1.450 - 62.75 0.048 - 83.28 0.486 107.24 4.85 0.849 72.60 1.448 - 65.03 0.048 - 84.88 0.483 105.01 4.90 0.845 70.48 1.443 - 67.33 0.048 - 86.30 0.482 103.27 4.95 0.841 68.09 1.443 - 69.60 0.048 - 87.72 0.477 101.51 5.00 0.841 65.50 1.442 - 72.12 0.048 - 89.22 0.474 99.28 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 50 mA (continued) MRFG35003NT1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 D 1 2 R 0.115 2.92 L 0.020 0.51 4 0.35 (0.89) X 45_" 5 _ ARCHIVE INFORMATION N K Q ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ 4 ZONE W 2 1 3 G S ZONE X VIEW Y - Y mm SOLDER FOOTPRINT P U H ZONE V inches 10_DRAFT C Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 ARCHIVE INFORMATION B 0.115 2.92 MRFG35003NT1 8 RF Device Data Freescale Semiconductor REVISION HISTORY The following table summarizes revisions to this document. Revision Date 5 Jan. 2008 Description • Listed replacement part, p. 1 ARCHIVE INFORMATION ARCHIVE INFORMATION • Added Revision History, p. 9 MRFG35003NT1 RF Device Data Freescale Semiconductor 9 How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35003NT1 Document Number: MRFG35003N Rev. 5, 1/2008 10 RF Device Data Freescale Semiconductor
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