MRFG35003N6T1

Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% • 3 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Symbol Value Unit VDSS 8 Vdc (2) Total Device Dissipation @ TC = 25°C Derate above 25°C PD 22.7 0.15 (2) W W/°C Gate - Source Voltage VGS -5 Vdc RF Input Power Pin 24 dBm Storage Temperature Range Tstg - 65 to +150 °C Channel Temperature (1) Tch 175 °C Operating Case Temperature Range TC - 20 to +85 °C Symbol Value Unit RθJC 6.6 (2) °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFG35003N6T1 1 ARCHIVE INFORMATION Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 2.9 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS — < 1.0 100 μAdc Off State Drain Current (VDS = 6 Vdc, VGS = - 1.9 Vdc) IDSO — 0.02 1.0 mAdc Off State Current (VDS = 20 Vdc, VGS = - 2.5 Vdc) IDSX — 1.0 15 mAdc Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) - 1.2 - 1.0 - 0.7 Vdc Quiescent Gate Voltage (VDS = 6 Vdc, IDQ = 180 mA) VGS(Q) - 1.1 - 0.9 - 0.7 Vdc Power Gain (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) Gps 8 9 — dB Output Power, 1 dB Compression Point (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) P1dB — 3 — W hD 22 24 — % ACPR — - 42 - 38 dBc Drain Efficiency (VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz. Tune for Maximum Pout) Adjacent Channel Power Ratio (VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRFG35003N6T1 2 RF Device Data Freescale Semiconductor VGS VDD=6.0 C11 C10 C9 C8 C7 C6 C5 C16 C17 C18 C19 C20 C21 C22 R1 C3 C4 C14 C15 RF INPUT C2 ARCHIVE INFORMATION Z1 Z2 Z10 C12 Z3 Z4 Z6 Z7 C13 Z8 Z9 Z11 Z12 Z13 C1 Z14 C24 C28 Z1, Z14 Z2 Z3 Z4 Z5, Z10 Z6 Z7 RF OUTPUT C23 0.044″ 0.440″ 0.340″ 0.380″ 0.527″ 0.027″ 0.538″ C27 C26 x 0.125″ Microstrip x 0.105″ Microstrip x 0.357″ Microstrip x 0.426″ Microstrip x 0.015″ Microstrip x 0.347″ Microstrip x 0.115″ Microstrip Z8 Z9 Z11 Z12 Z13 PCB C25 0.439″ x 0.136″ Microstrip 0.062″ x 0.280″ Microstrip 0.349″ x 0.302″ Microstrip 0.055″ x 0.130″ Microstrip 0.044″ x 0.502″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Designation Description C1 12 pF Chip Capacitor, ATC C2 0.1 pF Chip Capacitor (0805), AVX C3, C4, C14, C15 3.9 pF Chip Capacitors (0805), AVX C5, C16 10 pF Chip Capacitors, ATC C6, C17 100 pF Chip Capacitors, ATC C7, C18 100 pF Chip Capacitors, ATC C8, C19 1000 pF Chip Capacitors, ATC C9, C20 3.9 μF Chip Capacitors, ATC C10, C21 0.1 μF Chip Capacitors, ATC C11, C22 22 μF, 35 V Tantalum Surface Mount Capacitor, Newark C12, C13, C26, C27 0.3 pF Chip Capacitors (0805), AVX C23, C25, C28 1.0 pF Chip Capacitors (0805), AVX C24 7.5 pF Chip Capacitor, ATC R1 50 W Chip Resistor, Newark ARCHIVE INFORMATION Z5 MRFG35003N6T1 RF Device Data Freescale Semiconductor 3 C7 C18 + C6 C10 C9 C8 C5 C17 R1 C3 C21 C22 C4 C14 C15 C13 C23 C2 C1 C20 C16 C12 ARCHIVE INFORMATION C19 C24 C28 C27 C26 C25 MRFG35003M6 Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout ARCHIVE INFORMATION + C11 MRFG35003N6T1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 IRL −10 −20 −10 −20 VDS = 6 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_ −30 −30 −40 −40 ACPR −50 −50 −60 0.1 1 Pout, OUTPUT POWER (WATTS) 40 11.5 35 G T , TRANSDUCER GAIN (dB) 12 11 30 10.5 25 GT 10 20 9.5 15 PAE 9 8.5 10 VDS = 6 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_ 5 8 PAE, POWER ADDED EFFICIENCY (%) Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 0 1 0.1 Pout, OUTPUT POWER (WATTS) Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. ARCHIVE INFORMATION −60 ARCHIVE INFORMATION ACPR (dBc) IRL, INPUT RETURN LOSS (dB) 0 MRFG35003N6T1 RF Device Data Freescale Semiconductor 5 S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.5 0.954 - 176.79 3.859 84.89 0.016 9.07 0.847 178.96 0.55 0.953 - 177.98 3.527 83.61 0.016 8.90 0.846 178.38 0.6 0.952 - 179.13 3.250 82.29 0.016 8.49 0.846 177.74 0.65 0.952 179.80 3.019 80.95 0.016 8.44 0.845 177.07 0.7 0.952 178.89 2.818 79.74 0.016 8.51 0.844 176.28 0.75 0.951 177.96 2.643 78.49 0.016 8.53 0.844 175.55 0.8 0.952 177.03 2.491 77.11 0.017 8.75 0.843 174.77 0.85 0.952 176.22 2.354 75.85 0.017 8.61 0.842 173.93 0.9 0.951 175.46 2.234 74.67 0.017 8.62 0.842 173.12 0.95 0.951 174.66 2.124 73.38 0.017 8.56 0.841 172.27 1 0.952 173.92 2.025 72.17 0.017 8.48 0.841 171.37 1.05 0.951 173.18 1.934 70.97 0.017 8.47 0.841 170.50 1.1 0.951 172.40 1.851 69.68 0.017 8.93 0.841 169.75 1.15 0.951 171.63 1.774 68.46 0.017 8.90 0.840 168.89 1.2 0.951 170.90 1.704 67.25 0.018 8.79 0.841 168.10 1.25 0.950 170.06 1.638 65.98 0.018 8.80 0.841 167.34 1.3 0.951 169.23 1.576 64.74 0.018 8.44 0.840 166.61 1.35 0.946 168.58 1.518 63.62 0.018 8.76 0.838 166.13 1.4 0.952 167.47 1.463 62.45 0.018 9.00 0.845 165.24 1.45 0.949 166.77 1.411 61.29 0.018 8.57 0.841 164.98 1.5 0.949 163.72 1.360 60.14 0.018 8.15 0.842 166.78 1.55 0.948 162.94 1.317 59.12 0.018 8.28 0.843 166.27 1.6 0.947 162.21 1.276 58.03 0.018 8.51 0.843 165.71 1.65 0.950 161.60 1.237 56.92 0.018 8.31 0.843 165.16 1.7 0.951 160.97 1.201 55.93 0.018 8.40 0.844 164.60 1.75 0.950 160.44 1.167 54.89 0.018 8.35 0.844 164.10 1.8 0.950 159.95 1.135 53.83 0.019 8.44 0.844 163.47 1.85 0.952 159.46 1.105 52.85 0.019 8.61 0.843 162.87 1.9 0.951 159.01 1.076 51.92 0.019 8.34 0.844 162.37 1.95 0.950 158.58 1.049 50.84 0.019 7.93 0.843 161.77 2 0.952 158.25 1.024 49.95 0.019 8.02 0.843 161.24 2.05 0.951 157.84 1.000 49.06 0.019 7.86 0.844 160.75 2.1 0.951 157.48 0.979 48.17 0.019 7.67 0.845 160.26 2.15 0.952 157.17 0.959 47.22 0.019 7.24 0.843 159.69 2.2 0.952 156.89 0.939 46.34 0.020 6.89 0.843 159.08 2.25 0.952 156.63 0.921 45.44 0.020 6.73 0.844 158.58 2.3 0.952 156.35 0.904 44.48 0.020 6.86 0.843 158.07 2.35 0.953 155.98 0.888 43.57 0.020 6.83 0.842 157.42 2.4 0.951 155.66 0.873 42.68 0.020 6.80 0.842 156.97 2.45 0.952 155.28 0.860 41.72 0.020 6.74 0.842 156.47 2.5 0.952 154.86 0.848 40.82 0.020 6.73 0.840 155.83 2.55 0.950 154.44 0.836 39.90 0.021 6.72 0.841 155.29 2.6 0.949 153.93 0.826 38.89 0.021 6.86 0.840 154.74 2.65 0.950 153.36 0.815 37.85 0.021 6.74 0.838 154.18 2.7 0.949 152.82 0.806 36.81 0.022 6.24 0.838 153.62 2.75 0.946 152.08 0.797 35.75 0.022 5.69 0.839 153.16 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA MRFG35003N6T1 6 RF Device Data Freescale Semiconductor S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2.8 0.946 151.55 0.787 34.63 0.022 4.64 0.836 152.55 2.85 0.946 150.81 0.778 33.54 0.023 3.61 0.836 152.02 2.9 0.945 150.11 0.770 32.46 0.023 2.16 0.837 151.54 2.95 0.945 149.30 0.762 31.37 0.023 1.54 0.835 150.98 3 0.945 148.44 0.754 30.25 0.023 1.03 0.835 150.40 3.05 0.944 147.58 0.747 29.09 0.023 0.48 0.837 149.89 3.1 0.943 146.55 0.739 27.89 0.023 0.15 0.835 149.35 3.15 0.943 145.54 0.732 26.69 0.023 - 0.33 0.834 148.72 3.2 0.944 144.52 0.725 25.53 0.023 - 0.41 0.836 148.13 3.25 0.941 143.47 0.718 24.33 0.023 - 0.52 0.835 147.62 3.3 0.941 142.43 0.711 23.09 0.023 - 1.22 0.834 147.01 3.35 0.941 141.33 0.704 21.89 0.023 - 1.40 0.834 146.44 3.4 0.940 140.22 0.697 20.67 0.024 - 1.31 0.834 145.89 3.45 0.939 139.25 0.689 19.44 0.024 - 1.58 0.832 145.40 3.5 0.940 138.09 0.682 18.26 0.024 - 1.85 0.833 144.66 3.55 0.940 137.05 0.675 17.08 0.024 - 2.29 0.834 144.11 3.6 0.939 136.07 0.668 15.88 0.025 - 2.75 0.832 143.59 3.65 0.941 135.06 0.661 14.68 0.025 - 3.55 0.831 142.91 3.7 0.939 134.20 0.653 13.50 0.025 - 4.69 0.832 142.34 3.75 0.939 133.35 0.646 12.39 0.025 - 5.45 0.831 141.92 3.8 0.939 132.47 0.639 11.29 0.025 - 6.34 0.830 141.27 3.85 0.940 131.67 0.632 10.20 0.025 - 6.85 0.831 140.64 3.9 0.939 130.89 0.625 9.15 0.025 - 6.90 0.831 140.02 3.95 0.940 130.26 0.619 8.10 0.025 - 6.60 0.830 139.40 4 0.941 129.57 0.613 7.10 0.025 - 6.63 0.830 138.76 4.05 0.941 128.98 0.608 6.11 0.026 - 6.67 0.831 138.17 4.1 0.942 128.44 0.602 5.10 0.026 - 7.00 0.830 137.56 4.15 0.942 128.03 0.598 4.14 0.026 - 7.30 0.828 136.87 4.2 0.941 127.57 0.593 3.17 0.027 - 7.73 0.828 136.20 4.25 0.940 127.14 0.589 2.15 0.027 - 8.12 0.827 135.56 4.3 0.941 126.75 0.585 1.21 0.027 - 8.11 0.826 134.85 4.35 0.941 126.39 0.581 0.25 0.027 - 8.33 0.826 134.13 4.4 0.939 125.97 0.578 - 0.74 0.028 - 8.73 0.825 133.44 4.45 0.939 125.64 0.575 - 1.67 0.028 - 8.92 0.823 132.68 4.5 0.939 125.36 0.573 - 2.59 0.029 - 9.42 0.823 131.92 4.55 0.938 124.98 0.571 - 3.50 0.029 - 9.66 0.823 131.23 4.6 0.938 124.55 0.570 - 4.53 0.030 - 10.28 0.822 130.45 4.65 0.938 124.20 0.571 - 5.52 0.030 - 10.87 0.821 129.60 4.7 0.937 123.76 0.570 - 6.60 0.031 - 11.91 0.821 128.79 4.75 0.935 123.17 0.569 - 7.76 0.031 - 13.22 0.819 127.98 4.8 0.935 122.58 0.569 - 8.89 0.031 - 14.16 0.817 127.09 4.85 0.934 121.93 0.570 - 9.98 0.031 - 14.45 0.817 126.23 4.9 0.932 121.14 0.570 - 11.17 0.032 - 14.82 0.816 125.41 4.95 0.932 120.43 0.571 - 12.37 0.032 - 14.82 0.815 124.46 5 0.929 119.55 0.573 - 13.61 0.032 - 14.83 0.815 123.55 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA (continued) MRFG35003N6T1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 D 1 2 R 0.115 2.92 L 0.020 0.51 4 0.35 (0.89) X 45_" 5 _ ARCHIVE INFORMATION N K Q ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ 4 ZONE W 2 1 3 G S ZONE X VIEW Y - Y mm SOLDER FOOTPRINT P U H ZONE V inches 10_DRAFT C Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 ARCHIVE INFORMATION B 0.115 2.92 MRFG35003N6T1 8 RF Device Data Freescale Semiconductor REVISION HISTORY The following table summarizes revisions to this document. Revision Date 6 Jan. 2008 Description • Listed replacement part, p. 1 ARCHIVE INFORMATION ARCHIVE INFORMATION • Added Revision History, p. 9 MRFG35003N6T1 RF Device Data Freescale Semiconductor 9 How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35003N6T1 Document Number: MRFG35003N6 Rev. 6, 1/2008 10 RF Device Data Freescale Semiconductor