2SK2050

2SK2050 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 100V 0,055Ω 30A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 100 100 30 120 ±20 80 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=100V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=15A VGS=4V ID=15A VGS=10V ID=15A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=30A VGS=10V RGS=25 Ω Min. 100 1,0 Typ. 1,5 10 0,2 10 0,04 0,03 30 2500 500 250 20 140 500 260 Max. 2,5 500 1,0 100 0,07 0,055 3700 750 380 30 210 750 390 30 120 1,5 15 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 0,9 130 1 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 1,56 Unit °C/W °C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 100V 0,055Ω 30A 2SK2050 F-III Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 80W > Characteristics Typical Output Characteristics ↑ ID [A] 1 ↑ RDS(ON) [Ω] 2 ↑ ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(ON) [Ω] 4 ↑ gfs [S] 5 ↑ VGS(th) [V] 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode ↑ C [nF] 7 ↑ VDS [V] 8 ↑ VGS [V] ↑ IF [A] 9 VDS [V] → Qg [nC] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area ↑ Zth(ch-c) [K/W] Transient Thermal impedance ↑ PD [W] 10 ↑ ID [A] 12 11 Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice!