GL3906

CORPORATION GL3906 Description Package Dimensions PNP EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/23 REVISED DATE : The GL3906 is designed for general purpose Switching and Amplifier Applications. REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 C 0C 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 T YP. C 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -40 -40 -5 -200 1.5 Unit V V V mA W Characteristics Symbol BVCBO BVCEO BVEBO ICES IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 fT C ob at Ta = 25 : Min. -40 -40 -5 -0.65 60 80 100 60 30 250 Typ. -0.2 -0.84 Max. -50 -50 -0.25 -0.4 -0.85 -0.95 300 4.5 MHz pF Unit V V V nA nA V V V V IC=-10uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA VCE=-20V, IE=-10mA, f=100MHz VCB=-5V, f=1MHz Test Conditions N ote:Pulse test:PW