2N3906

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features
PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906

MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 μA Collector cut-off current ICEX VCE= -30 V,VBE(off)=-3V -50 nA IEBO VEB= -5 V , -0.1 μA hFE1 VCE=-1 V, IC= -10mA 100 hFE2 VCE=-1 V, IC= -50mA 60 hFE3 VCE=-1 V, IC= -100mA 30 Emitter cut-off current DC current gain IC=0 400 Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5mA -0.95 V VCE=-20V, IC= -10mA 250 MHz Transition frequency fT Delay Time td VCC=-3V,VBE=-0.5V, 35 ns Rise Time tr IC=-10mA,IB1=-1mA 35 ns Storage Time ts VCC=-3V,Ic=-10mA 225 ns Fall Time tf IB1=IB2=-1mA 75 ns f = 100MHz CLASSIFICATION OF hFE1 Rank Range Revision:20170701-P1 O Y G 100-200 200-300 300-400 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com 2N3906(PNP) TO-92 Bipolar Transistors Typical Characteristics Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com