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2N3906

2N3906

  • 厂商:

    NTE

  • 封装:

    TO92-3

  • 描述:

    晶体管类型:PNP 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):625mW

  • 数据手册
  • 价格&库存
2N3906 数据手册
2N3905 & 2N3906 Silicon PNP Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/5C Total Device Dissipation (TA = +605C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 40 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 105 A, IE = 0 40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 105 A, IC = 0 5 − − V Collector Cutoff Current Base Cutoff Current ICEX VCE = 30V, VEB = 3V − − 50 nA IBL VCE = 30V, VEB = 3V − − 50 nA VCE = 1V, IC = 0.1mA 30 − − 60 − − 40 − − 80 − − ON Characteristics (Note 1) DC Current Gain 2N3905 hFE 2N3906 2N3905 VCE = 1V, IC = 1mA 2N3906 2N3905 VCE = 1V, IC = 10mA 2N3906 2N3905 VCE = 1V, IC = 50mA 2N3906 2N3905 VCE = 1V, IC = 100mA 2N3906 Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. 50 − 150 100 − 300 30 − − 60 − − 15 − − 30 − − Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 10mA, IB = 1mA − − 0.25 V IC = 50mA, IB = 5mA − − 0.4 V IC = 10mA, IB = 1mA 0.65 − 0.85 V IC = 50mA, IB = 5mA − − 0.95 V 200 − − MHz 250 − − MHz ON Characteristics (Cont’d) (Note 1) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Small−Signal Characteristics Current Gain−Bandwidth Product 2N3905 fT IC = 10mA, VCE = 20V, f = 100MHz 2N3906 Output Capacitance Cobo VCB = 5V, IE = 0, f = 1MHz − − 4.5 pF Input Capacitance Cibo VCB = 0.5V, IC = 0, f = 100kHz − − 10.0 pF IC = 1mA, VCE = 10V, f = 1kHz 0.5 − 8.0 k3 2.0 − 12 k3 0.1 − 5.0 x 10−4 0.1 − 10 x 10−4 Input Impedance 2N3905 hie 2N3906 Voltage Feedback Ratio 2N3905 hre IC = 1mA, VCE = 10V, f = 1kHz 2N3906 Small−Signal Current Gain 2N3905 hfe IC = 1mA, VCE = 10V, f = 1kHz 2N3906 Output Admittance 2N3905 hoe IC = 1mA, VCE = 10V, f = 1kHz 2N3906 Noise Figure 2N3905 NF IC = 1005 A, VCE = 5V, RS = 1k3 , f = 10Hz to 15.7kHz 2N3906 50 − 200 100 − 400 1.0 − 40 5 mhos 3.0 − 60 5 mhos − − 5.0 db − − 4.0 db − − 35 ns − − 35 ns − − 200 ns − − 225 ns − − 60 ns − − 75 ns Switching Characteristics Delay Time td Rise Time tr Storage Time 2N3905 ts VCC = 3V, VEB = 0.5V, IC = 10mA, IB1 = 1mA VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA 2N3906 Fall Time 2N3905 tf 2N3906 Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
2N3906 价格&库存

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2N3906
  •  国内价格 香港价格
  • 500+1.56377500+0.18952

库存:4000