2N3906

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N3906 Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View PNP General Purpose Amplifier TO-92 A E C B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=100MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=100kHz) Noise Figure (IC=100µ Adc, VCE=5.0Vdc, RS=1.0kΩ f=10Hz to 15.7kHz) Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% Min 40 40 5.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX B ON CHARACTERISTICS hFE 60 80 100 60 30 C 300 VCE(sat) 0.25 0.4 0.65 0.85 0.95 Vdc D VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 250 4.5 10.0 4.0 MHz G pF DIMENSIONS pF dB DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 35 35 225 75 ns ns ns ns www.mccsemi.com 2N3906 DC Current Gain vs Collector Current 220 VCE = 1.0V 200 160 hFE 120 80 40 VBE(ON) - (V) 0.6 0.4 0.2 0 0.1 TA = 100°C 1.2 1.0 0.8 TA = 25°C MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Collector-Emitter Saturation Volatge vs Collector Current 0.6 0.5 0.4 VCE(SAT) - (V) 0.3 0.2 0.1 0 1.0 VBE(SAT) - (V) IC/IB = 10 TA = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 Base-Emitter Saturation Voltage vs Collector Current IC/IB = 10 TA = 25°C 10 IC - (mA) 100 1000 0.2 1.0 10 IC - (mA) 100 1000 Collector-Base Diode Reverse Current vs Temperature 100 Common Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 1.0 COBO TA = 25°C TO-92 8 VCB = 20V 10 ICBO - (mA) 1.0 2 0.1 0 25 50 75 TJ - (°C) 100 125 150 0 0.1 pF 6 CIBO 4 1.0 Volts - (V) 10 www.mccsemi.com 2N3906 Maximum Power Dissipation vs Ambient Temperature 800 12 10 600 TO-92 PD(MAX) - (mW) 400 NF - (dB) 6 4 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 24 20 16 VCE - (V) 12 8 4 0 0.1 10 0.1 hfe 100 1000 150 200 2 0 0.1 8 IC = 1.0mA Noise Figure vs Source Resistance MCC VCE = 5.0V f = 1.0kHz IC = 100µ A 1.0 10 RS - (kΩ) 100 Current Gain VCE = 10V f = 1.0kHz 10 100 IC - (mA) *100MHz increments from 100 to 700, 750 and 800MHz 1.0 1.0 IC - (mA) 10 Noise Figure vs Frequency 6 VCE = 5.0V 5 1000 Switching Times vs Collector Current IB1 = IB2 = IC/10 ts 4 NF - (dB) 3 2 1 0 IC = 100µ A RS = 200Ω T - (ns) 100 tf IC = 1.0mA RS = 200Ω IC = 100µ A RS = 2.0kΩ 10 tr td 0.1 1.0 f - (kHz) 10 100 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com 2N3906 Input Impedance 10 VCE = 10V f = 1.0kHz 1000 Output Admittance MCC VCE = 10V f = 1.0kHz hoe - (µΩ) 100 hie - (kΩ) 1.0 0.1 0.1 10 1.0 IC - (mA) 10 0.1 1.0 IC - (mA) 10 Voltage Feedback Ratio 100 1000 Turn On and Turn Off Times vs Collector Current hfe - (X10 ) 10 T - (ns) -4 100 toff ton 10 ton IB1 = IC/10 VBE(OFF) = 0.5V toff IB1 = IB2 = IC/10 10 IC - (mA) 100 1.0 0.1 1.0 IC - (mA) 10 1.0 1.0 www.mccsemi.com