2N3906

NEW PRODUCT NEW PRODUCT NEW PRODUCT 2N3906 SMALL SIGNAL TRANSISTORS (PNP) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the NPN transistor 2N3904 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT3906. max. Æ 0.022 (0.55) 0.098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25¡C at TC = 25¡C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range ÐVCBO ÐVCEO ÐVEBO ÐIC Ptot 40 40 5.0 200 625 1.5 Volts Volts Volts mA mW Watts ¡C/W ¡C ¡C RqJA Tj TS 250(1) 150 Ð 65 to +150 NOTES: (1) Valid provided that leads are kept at ambient temperature. 1/5/99 2N3906 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at ÐIC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at ÐIC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at ÐIE = 10 mA, IC = 0 Collector Saturation Voltage at ÐIC = 10 mA, ÐIB = 1 mA at ÐIC = 50 mA, ÐIB = 5 mA Base Saturation Voltage at ÐIC = 10 mA, ÐIB = 1 mA at ÐIC = 50 mA, ÐIB = 5 mA Collector-Emitter Cutoff Current at ÐVEB = 3 V, ÐVCE = 30 V Emitter-Base Cutoff Current at ÐVEB = 3 V, ÐVCE = 30 V DC Current Gain at ÐVCE = 1 V, ÐIC = 0.1 mA at ÐVCE = 1 V, ÐIC = 1 mA at ÐVCE = 1 V, ÐIC = 10 mA at ÐVCE = 1 V, ÐIC = 50 mA at ÐVCE = 1 V, ÐIC = 100 mA Input Impedance at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Voltage Feedback Ratio at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Gain-Bandwidth Product at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz Collector-Base Capacitance at ÐVCB = 5 V, f = 100 kHz Emitter-Base Capacitance at ÐVEB = 0.5 V, f = 100 kHz ÐV(BR)CBO ÐV(BR)CEO ÐV(BR)EBO 40 40 5 Ð Ð Ð Volts Volts Volts ÐVCEsat ÐVCEsat ÐVBEsat ÐVBEsat ÐICEV Ð Ð Ð Ð Ð 0.25 0.4 0.85 0.95 50 Volts Volts Volts Volts nA ÐIEBV hFE hFE hFE hFE hFE hie Ð 60 80 100 60 30 1 0.5 á 10Ð4 250 Ð Ð 50 Ð Ð 300 Ð Ð 10 8 á 10Ð4 Ð 4.5 10 nA Ð Ð Ð Ð Ð kW hre fT CCBO CEBO Ð MHz pF pF 2N3906 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Output Admittance at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz Noise Figure at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz Delay Time (see Fig. 1) at ÐIB1 = 1 mA, ÐIC = 10 mA Rise Time (see Fig. 1) at ÐIB1 = 1 mA, ÐIC = 10 mA Storage Time (see Fig. 2) at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA Fall Time (see Fig. 2) at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA hfe 100 400 Ð hoe 1 40 mS NF Ð 4 dB td Ð 35 ns tr Ð 35 ns ts Ð 225 ns tf Ð 75 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors