HMF2M32M8A-75

HANBit HMF2M32M8A FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V Part No. HMF2M32M8A GENERAL DESCRIPTION The HMF2M32M8A is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board. The HMF2M32M8A is entirely pin and command set compatible with JEDEC standard 4M -bit EEPROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/1CSLL, /2CSLL, /1CSLH, /2CSLH, /1CSHL, /2CSHL, /1CSHH, /2CSHH ) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES w Access time : 75, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is Am29F080B PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 - 75 - 90 -120 20 21 22 120ns access w Packages 72-pin SIMM M 23 24 SYMBOL Vss NC D0 D1 D2 D3 D4 D5 D6 VCC D7 /1CSLL /2CSLL D8 D9 D10 D11 D12 D13 D14 D15 /1CSLH /2CSLH D16 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL D17 D18 D19 D20 D21 Vcc D22 D23 /1CSHL /2CSHL D24 D25 D26 D27 Vss D28 D29 D30 D31 /1CSHH /2CSHH VCC /RESET /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL /WE A20 A19 A18 A17 A16 A15 A14 A13 A12 Vcc A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A21 A22 Vss OPTIONS w Timing 75ns access 90ns access MARKING 72-PIN SIMM TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM D32 A21 HMF2M32M8A D D-D31-31 0Q 0 A2-A22 A0-19 A0-20 D0-7 A0-20 D0-7 /WE /OE /1CSLL /WE /OE /2CSLL U1 /CE U5 /CE A0-20 D8-15 A0-20 D8-15 /WE /OE /WE /OE /1CSLH U2 /CE /2CSLH U6 /CE A0-20 D16-23 A0-20 D16-23 /WE /OE /WE /OE /1CSHL U3 /CE /2CSHL U7 /CE A0-20 /WE /WE /OE D24-31 /WE A0-20 D24-31 /OE U4 /CE /WE /OE /OE U8 /CE /2CSHH /1CSHH TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE URL: www.hbe.co.kr REV.02(August,2002) /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE ACTIVE HANBit Electronics Co., Ltd. 2 HANBit NOTE: X means don’t care HMF2M32M8A ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +125oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and fu nctional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ±5% device Supply Voltages Vcc for ± 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Vcc Vcc=Vcc max, VOUT= GND to Output Leakage Current Vcc Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. /CE= VIH ICC3 VLKO 3.2 40 4.2 µA V /CE = VIL, /OE=VIH ICC2 320 mA IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, VOH VOL ICC1 0.85x Vcc 0.45 320 IL0 TEST CONDITIONS Vcc=Vcc max, V IN= GND to IL1 SYMBOL MIN MAX ±8.0 UNITS µA ±8.0 µA V V mA URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max HMF2M32M8A ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 1 7 7.2 MAX. Excludes 00H programming 8 300 21.6 sec prior to erasure µs sec Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o MIN 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF VIN = 0 VOUT = 0 VIN = 0 Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDAR D tAVAV tAVQV tRC tACC Address to Output Delay /OE = V IL tELQV tGLQV tEHQZ tGHQZ tCE tOE tDF tDF Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, tAXQX tQH /CE or /OE, Whichever Occurs First Min 0 0 0 ns /OE = V IL Max Max Max Max 70 40 20 20 90 40 20 20 120 50 30 30 ns ns ns ns Read Cycle Time /CE = V IL Max 70 90 120 ns Min 70 90 120 ns TEST SETUP -75 -90 -120 UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance, CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 75 HMF2M32M8A ALL OTHERS 1TTL gate UNIT 30 5 0.0 - 3.0 1.5 1.5 100 20 0.45-2.4 0.8, 2.0 0.8, 2.0 pF ns V V V 5.0V IN3064 or Equivalent Device Under CL 6.2kΩ Diodes = IN3064 or Equivalent 2.7kΩ Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS JEDEC STANDARD tAVAV tAVWL tWLAX tDVWH tWHDX tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS DESCRIPTION W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 40 40 40 -75 70 -90 90 0 45 45 0 0 0 0 0 45 20 7 1 50 50 50 50 -120 120 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec µs Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations STANDARD tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Typ Typ 40 40 40 70 DESCRIPTION -75 HMF2M32M8A -90 -120 UNIT 90 0 45 45 0 0 0 0 45 20 7 1 120 ns ns 50 50 ns ns ns ns ns ns 50 ns ns µs sec URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF2M32M8A u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF2M32M8A u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF2M32M8A u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF2M32M8A u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS (Front-Side) HMF2M32M8A (Rear-Side) 2.54 mm 0.25 mm MAX MIN Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm 1.27±0.08 (Solder & Gold Plating) URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION HMF2M32M8A Part Number Density Org. Package Component Number 8EA 8EA 8EA Vcc SPEED HMF2M32M8A-75 HMF2M32M8A-90 HMF2M32M8A-120 8MByte 8MByte 8MByte 2M×32bit 2M×32bit 2M×32bit 72Pin-SIMM 72Pin-SIMM 72Pin-SIMM 5.0V 5.0V 5.0V 75ns 90ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd.