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2SC2547

2SC2547

  • 厂商:

    HITACHI(日立)

  • 封装:

  • 描述:

    2SC2547 - Silicon NPN Epitaxial - Hitachi Semiconductor

  • 数据手册
  • 价格&库存
2SC2547 数据手册
2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1083, 2SA1084 and 2SA1085 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2545, 2SC2546, 2SC2547 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2545 60 60 5 100 –100 400 150 –55 to +150 2SC2546 90 90 5 100 –100 400 150 –55 to +150 2SC2547 120 120 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SC2545, 2SC2546, 2SC2547 Electrical Characteristics (Ta = 25°C) 2SC2545 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO 60 V(BR)CEO 60 V(BR)EBO 5 ICBO IEBO 1 2SC2546 Max — — — 0.1 0.1 Min 90 90 5 — — Typ Max — — — — — — — 0.6 90 3.0 0.5 — — — 0.1 0.1 1200 0.2 — — — — 2SC2547 Min 120 120 5 — — 250 — — — — — Typ Max — — — — — — — 0.6 90 3.0 0.5 — — — 0.1 0.1 800 0.2 — — — — V V Unit Test conditions V V V µA µA IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA Typ — — — — — — — 0.6 90 3.0 0.5 — — 250 — — — — — DC current transfer ratio hFE* Collector to emitter saturation voltage Base to emitter voltage 1200 250 0.2 — — — — — — — — — VCE(sat) VBE Gain bandwidth product fT Collector output capacitance Noise voltage referred input Cob en MHz VCE = 12 V, IC = 2 mA pF nV/ √Hz VCB = 10 V, IE = 0, f = 1 MHz VCE = 6V, IC = 10 mA, f = 1 kHz, Rg = 0, ∆f = 1Hz Note: 1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by hFE as follows. D E 400 to 800 400 to 800 F 600 to 1200 — 250 to 500 250 to 500 2SC2545, 2SC2546 2SC2547 3 2SC2545, 2SC2546, 2SC2547 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 50 70 60 50 30 40 30 20 10 10 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) P C 40 400 =0 .4 W 20 200 Typical Output Characteristics 20 Collector Current IC (mA) 25 20 15 10 5 µA IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) 10 Typical Transfer Characteristics VCE = 12 V 5 16 12 2 1.0 0.5 8 4 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 4 2SC2545, 2SC2546, 2SC2547 Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current 5,000 DC Current Transfer Ratio hFE VCE = 12 V Pulse Collector to Emitter Saturation Voltage vs. Collector Current 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1 50 2 5 10 20 Collector Current IC (mA) 100 IC = 10 IB 2,000 1,000 500 200 100 50 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 100 Base to Emitter Saturation Voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 10 5 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 Collector Current IC (mA) 100 IC = 10 IB Gain Bandwidth Product fT (MHz) 2,000 1,000 500 200 100 50 Gain Bandwidth Product vs. Collector Current VCE = 12 V 20 1 2 50 5 10 20 Collector Current IC (mA) 100 5 2SC2545, 2SC2546, 2SC2547 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 50 20 10 5 2 1 0.5 IE = 0 f = 1 MHz Signal Source Resistance Rg (kΩ) 100 30 V = 6 V CE f = 1 kHz 10 3 1.0 0.3 0.1 0.03 NF = 0.5 dB 1 2 4 6 10 Contours of Constant Noise Figure 1.0 2 5 10 20 50 Collector to Base Voltage VCB (V) Contours of Constant Noise Figure 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) Contours of Constant Noise Figure 100 Signal Source Resistance Rg (kΩ) 100 100 Signal Source Resistance Rg (kΩ) 30 10 3 1.0 NF = 0.5 dB 0.3 0.1 0.03 1 2 4 6 10 VCE = 6 V f = 120 Hz 30 10 3 1.0 0.3 0.1 0.03 NF = 0.5 dB VCE = 6 V f = 10 Hz 1 2 4 6 10 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) 100 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) 100 6 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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