2SK1669

2SK1669 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC – DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1669 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 30 120 30 125 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 250 ±30 — — 2.0 — 12 — — — — — — — — — Typ — — — — — 0.075 20 3100 1330 190 45 170 270 150 1.0 90 Max — — ±10 250 3.0 0.095 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 30 A, VGS = 0 I F = 30 A, VGS = 0, diF/dt = 100 A/µs I D = 15 A, VGS = 10 V, RL = 2 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 15 A, VGS = 10 V *1 I D = 15 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK1669 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 1,000 300 Drain Current ID (A) 100 30 10 3 1 0.3 0.1 0 50 100 Case Temperature TC (°C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Ta = 25°C a re sa ) thi S (on in D on y R ati b er ited Op lim PW is 10 = 1 10 100 0µ µs DC Op 10 ms s er ati ms on (1 50 (T Sh C = ot) 25 °C ) Typical Output Characteristics 50 10 V 40 Drain Current ID (A) 8V 6V 5V 30 4.5 V Drain Current ID (A) Pulse Test 40 50 Typical Transfer Characteristics VDS = 10 V Pulse Test 30 20 20 10 VGS = 4 V 10 TC = 75°C 25°C –25°C 0 8 4 12 16 Drain to Source Voltage VDS (V) 20 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 3 2SK1669 Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 4 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 VGS = 10 V, 15 V 3 2 ID = 20 A 10 A 5A 8 20 4 12 16 Gate to Source Voltage VGS (V) 0.02 0.01 1 0.005 1 2 5 10 20 Drain Current ID (A) 50 100 0 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) VGS = 10 V Pulse Test 0.16 ID = 30 A Forward Transfer Admittance yfs (S) 0.2 20 A 50 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 20 25°C 10 5 75°C Ta = –25°C 0.12 10 A 0.08 2 1 0.5 0.5 0.04 0 –40 40 0 80 120 Case Temperature TC (°C) 160 1 5 2 10 20 Drain Current ID (A) 50 4 2SK1669 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 10,000 Ciss 200 Capacitance C (pF) 100 50 di/dt = 100 A/µs, VGS = 0 Ta = 25°C, Pulse Test 1,000 Coss Typical Capacitance vs. Drain to Source Voltage 20 10 5 0.5 100 Crss VGS = 0 f = 1 MHz 10 10 2 1 5 20 Reverse Drain Current IDR (A) 50 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VGS = 50V 100 V 200 V VGS VDS 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics td (off) Switching Time t (ns) 200 tf 100 50 tr td (on) 400 16 300 12 200 8 20 10 5 0.5 100 VDD = 200 V 100 V 50 V ID = 30 A Pulse Test 200 4 . VGS = 10 V, VDD = 30 V . PW = 2 µs, duty < 1% 0 0 40 120 160 80 Gate Charge Qg (nc) 1 5 10 20 2 Drain Current ID (A) 50 5 2SK1669 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 20 VGS = 10 V 10 0, –5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.03 0.01 10 µ 0.01 Pulse hot 1S TC = 25°C θch–c (t) = γS (t) · θch–c θch–c = 1.0°C/W, TC = 25°C PDM PW 1 D = PW T T 1m 10 m Pulse Width PW (s) 100 m 100 µ 10 Waveforms Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Ω Vin 10 V VDD . = 30 V . Vout Vin 10% 10% 10% 90% td (off) tf 90% td (on) 90% tr 6 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.