2SK2735L

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 20 80 20 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2735(L), 2SK2735(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 20 35 16 750 520 210 16 225 85 90 1.0 40 Max — — ±10 10 2.0 28 50 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 20A, VGS = 0 diF/ dt = 50A/µs I F = 20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 10V*1 I D = 10A, VGS = 4V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz I D = 10A, VGS = 10V RL = 1Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr See characteristics curves of 2SK2684 3 2SK2735(L), 2SK2735(S) Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area 500 200 100 50 20 10 5 2 1 30 10 µs 0 s ot Channel Dissipation Drain Current PW C D 10 = 1 10 m s 20 m (1 µs 10 Operation in this area is limited by R DS(on) 0 50 100 150 Tc (°C) 200 Case Temperature Ta = 25 °C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) n tio ra pe O sh ) (T c = 25 °C ) Dynamic Input Characteristics V DS (V) I D = 20 A VDD = 5 V 10 V 25 V V GS 20 8 V GS (V) Gate to Source Voltage 50 20 40 16 Drain to Source Voltage 30 V DS 12 10 V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 0 4 2SK2735(L), 2SK2735(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 10 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 5 2SK2735(L), 2SK2735(S) Package Dimensions Unit: mm 1.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.7 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 16.2 ± 0.5 4.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.5 0.55 ± 0.1 5.5 ± 0.5 9.5 ± 0.5 1.2 Max 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 1.2 typ 0 ~ 0.25 0.55 ± 0.1 2.5 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 L type S type Hitachi EIAJ ( L type) EIAJ ( S type) JEDEC DPAK–2 SC–63 SC–64 — 6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.