2SK2735S

S MD SMD Type Silicon N-Channel MOSFET 2SK2735S IC MOSFET Features Low on-resistance RDS = 20 m typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching +0.15 5.55-0.15 +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 30 20 20 80 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS Testconditons ID=10mA,VGS=0V VDS=30V,VGS=0 VGS= 16V,VDS=0 1.0 8 16 20 35 750 VDS=10V,VGS=0,f=1MHZ 520 210 16 ID=10A,VGS(on)=10V,RL=1 225 85 90 28 50 Min 30 10 10 2.0 Typ Max Unit V A A V S m m pF pF pF ns ns ns ns VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss ton tr toff tf VDS=10V,ID=10A VGS=10V,ID=10A VGS=4V,ID=10A 3.80 4V gate drive device can be driven from 5V source www.kexin.com.cn 1