2SK2735STL-E

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous: ADE-208-543) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain 1 23 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 30 ±20 20 80 20 20 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 30 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 20 35 16 750 520 210 16 225 85 90 1.0 40 Max — — ±10 10 2.0 28 50 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V*3 ID = 10 A, VGS = 4 V*3 ID = 10 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 10 A, VGS = 10 V, RL = 1 Ω IF = 20 A, VGS = 0 diF/ dt = 50 A/ µs IF = 20 A, VGS = 0 diF/ dt = 50A/ µs Rev.2.00 Sep 07, 2005 page 2 of 7 2SK2735(L), 2SK2735(S) Main Characteristics Power vs. Temperature Derating 40 Maximum Safe Operation Area 500 200 Channel Dissipation Pch (W) Drain Current ID (A) 30 100 50 20 10 5 2 D C 10 µs 0 s ot 10 PW O pe 20 = 1 10 m s m (1 µs 10 0 50 100 150 200 1 Ta = 25°C 0.5 0.1 0.3 1 Operation in this area is limited by RDS(on) 3 ra n tio sh ) (T c 10 = 25 °C ) 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 6V 5V Pulse Test 50 Typical Transfer Characteristics Drain Current ID (A) Drain Current ID (A) 40 4.5 V 40 25°C –25°C Tc = 75°C 30 4V 3.5 V VGS = 3 V 30 20 20 10 10 VDS = 10 V Pulse Test 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 1.0 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50 VGS = 4 V 0.8 0.6 ID = 20 A 10 A 5A 0 4 8 12 16 20 0.4 Static Drain to Source on State Resistance RDS (on) (mΩ) 20 10 5 1 2 5 0.2 10 V 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 7 2SK2735(L), 2SK2735(S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance yfs (S) 100 Pulse Test 80 ID = 20 A VGS = 4 V 100 30 10 3 1 0.3 0.1 0.1 75°C Tc = –25°C 25°C 60 40 5, 10 A 20 10 V 0 –40 0 40 80 5, 10, 20 A VDS = 10 V Pulse Test 120 160 0.3 1 3 10 30 100 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1000 10000 5000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 300 100 30 10 3 1 0.1 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Capacitance C (pF) 2000 1000 Ciss 500 Coss 200 100 Crss 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics Drain to Source Voltage VDS (V) ID = 20 A VDD = 5 V 10 V 25 V VGS Gate to Source Voltage VGS (V) 50 20 1000 300 100 30 10 3 1 0.1 tr td(on) tf td(off) 30 VDS 12 20 8 10 VDD = 25 V 10 V 5V 4 0 40 Switching Time t (ns) 40 16 VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % 0 8 16 24 32 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 7 2SK2735(L), 2SK2735(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 40 10 V 30 5V VGS = 0, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 0.0 θch – c(t) = γs (t) • θch – c θch – c = 6.25°C/W, Tc = 25°C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width Switching Time Test Circuit PW (S) Waveform 90% Vin Monitor D.U.T. RL Vout Monitor Vin Vout 10% 10% 10% Vin 10 V 50 Ω VDD = 10 V td(on) 90% 90% td(off) tf tr Rev.2.00 Sep 07, 2005 page 5 of 7 2SK2735(L), 2SK2735(S) Package Dimensions JEITA Package Code  RENESAS Code PRSS0004ZD-B Package Name DPAK(L)-(2) / DPAK(L)-(2)V MASS[Typ.] 0.42g Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 5.5 ± 0.5 1.2 ± 0.3 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Package Name DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 1.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 (0.1) (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) 5.5 ± 0.5 1.2 Max 0 – 0.25 (1.2) 2.5 ± 0.5 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) 2SK2735(L), 2SK2735(S) Ordering Information Part Name 2SK2735L-E 2SK2735STL-E Quantity 3200 pcs 3000 pcs Box (Sack) Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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