H50N03J

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 H50N03J N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03J Pin Assignment Tab 1 2 3 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features • RDS(on)=6mΩ@VGS=10V, ID=30A • RDS(on)=9mΩ@VGS=4.5V, ID=30A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM D Internal Schematic Diagram G S Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation TA=25oC TA=75 C Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.1mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted) *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board *2 o Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA Value 25 ±20 50 350 70 42 -55 to 150 300 1.8 40 Units V V A A W W o C mJ O O C/W C/W Switching Test Circuit VDD Switching Waveforms ton td(on) toff tr td(off) 90% tf 90 % VIN VGEN RG G D VOUT Output, VOUT 10% 10% Inverted 90% 50% 50% S Input, VIN 10% Pulse Width H50N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. ELectrical Characteristics Characteristic Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 2/5 Symbol Test Condition Min. Typ. Max. Unit BVDSS RDS(on) RDS(on) VGS(th) IDSS IGSS Rg gfs VGS=0V, ID=250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=25V, VGS=0V VGS=±20V, VDS=0V VDS=0V, VGS=1V at 1MHz VDS=15V, ID=15A 25 1.3 - 7.5 4.5 1.9 3 50 9 6 3 1 ±100 - V mΩ V uA nA Ω S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz VDD=15V, RL=15Ω, ID=1A VGEN=10V, RG=6Ω VDS=15V, ID=20A, VGS=5V - 16.8 6.08 4.93 15.3 4 45.27 7.6 2325.9 330.55 173.91 nS pF nC IS VSD IS=20A, VGS=0V - 0.85 50 1.3 A V H50N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Fig.1 Output Characteristric 80 ID - Drain-to-Source Current (A) ID - Drain Source Current (A) 80 Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 3/5 Fig.2 Transfer Characteristric VDS = 10V 60 V GS= 4.0V, 4.5V, 5.0V, 6.0V, 10.0V 60 3.5V 40 40 T J = 125oC 20 25oC 0 - 55oC 20 3.0V 2.5V 0 0 1 2 3 4 5 V DS - Drain-to-Source Voltage (V) 1 1.5 2 2.5 3 3.5 4 4.5 V GS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current RDS(ON) - O n-Resistance (m  ) Fig.4 On Resistance vs Gate to Source Voltage 30 20 RDS(ON) - O n-Resistance (m Ξ ) ID = 30A 25 20 15 10 5 0 125oC 15 10 V GS = 4.5V V GS = 10V 5 TJ =25oC 0 0 20 40 60 80 100 ID - Drain Current (A) 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature 1.5 Fig.6 Capacitance 6000 RDS(on) - On - Resistance ( Mormalized RDS(ON) - On-Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 VGS =10 V ID =30A 5000 C - Capacitance (pF) (Normalized) Ciss f=1MHz VGS=0V 4000 3000 2000 1000 0 Coss, Crss -50 -25 0 25 50 75 100 o 125 150 0 5 10 15 20 25 TJ - Junction Tem perature ( C) VDS - Drain-to-Source Voltage (V) H50N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 4/5 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 50N03 Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source N H a5 L a2 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb-Free: " . " (Note) H Normal: None Pb Free Mark J 50N03 Date Code Control Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H50N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly