MOT50N03D

MOT50N03C MOT50N03D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ(@VGS =10 V) RDS (on)Typ(@VGS=4.5 V) Symbol 2.Drain 30V 8mΩ 10mΩ 50A ID 1.Gate „ APPLICATIONS * Switching applications 3.Source  FEATURES 4 * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified 4 1 2 1 3 TO-252 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A MOT50N03D N/A MOT50N03C Package TO-252 TO-251 2 3 TO-251 Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) UNIT PARAMETER RATINGS SYMBOL 30 VDSS Drain-Source Voltage V ±20 V Gate-Source Voltage VGSS A 50 ID Continuous Drain Current A Pulsed Drain Current (Note 2) 180 IDM 45 EAS Single Pulsed Avalanche Energy (Note 3) mJ PD 50 W Power Dissipation TJ +150 Junction Temperature °C TSTG -55 ~ +150 °C Storage Temperature Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. -1- www.mot-mos.com MOT50N03C MOT50N03D N-CHANNEL MOSFET „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current On characteristics Gate-Threshold Voltage Drain-Source On-State Resistance SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS IGSS VGS =0V, ID =250 µA VDS=20V, VGS =0V VDS =0V, VGS = ±20V 30 - - 1.5 ±100 VGS(TH) VDS =VGS, ID =250 µA VGS = 10 V ID = 15 A VGS = 4.5V ID = 10 A 1.0 - 1.7 8 2.0 10 10 13 - 610 300 125 - pF - - ns - 8.2 9.6 11.2 6.8 5.0 84 15 4.0 6.0 1.9 3.7 15 1.9 3.9 - ns ns ns ns ns ns ns nC nC nC nC nC nC - 0.85 1.1 V - - 50 A - 24 14 - ns nC RDS(ON) - V µA nA V mΩ mΩ Dynamic characteristics Input Capacitance CISS VDS=12V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Switching characteristics Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS = 4.5 V, VDS =15 V, I Turn-OFF Delay Time tD(OFF) D = 30 A, RG = 3.0Ω Turn-OFF Fall-Time tF Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS = 11.5 V, VDS =15 V, ID = 30 A, RG = 3.0Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =15V,VGS =4.5V, Gate-to-Source Charge QGS ID =30 A Gate-to-Drain Charge QGD Total Gate Charge QG VDS =15V,VGS =11.5V, Gate-to-Source Charge QGS ID =30 A Gate-to-Drain Charge QGD Source-drain diode ratings and characteristics Drain-Source Diode Forward Voltage VSD IS=30 A, VGS =0V Maximum Continuous Drain-Source Diode IS Forward Current Reverse Recovery Time trr IS = 30 A, VGS = 0 V, dI /dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 2- - - pF pF www.mot-mos.com MOT50N03C MOT50N03D N-CHANNEL MOSFET Drain Current,ID (A) On-Resistance versus Gate-toSource Voltage 0.065 0.030 Drain-to-Source Resistance,RDS(ON) (Ω) Drain-to-Source Resistance,RDS(ON) (Ω) Drain Current,ID (A)  TY PICAL CHARACTERISTICS ID=15A TJ=25℃ 0.055 0.045 0.035 0.025 0.015 0.005 3 4 5 6 7 8 9 10 Gate-to-Source Voltage,VGS (V) TJ=25℃ 0.025 VGS=4.5V 0.020 0.015 VGS=10V 0.010 0.005 0 10 20 30 40 Drain Current,ID (A) Capacitance,C (pF) Leakage,IDSS (nA) 2 On-Resistance versus Drain Current and Gate Voltage -3- www.mot-mos.com 50 Gate-to-Source Voltage,VGS (V) -4Drain Current,ID (A) Drain-to-Source Voltage,VDS (V) Effective Transient Thermal Resistance (Normalized),r (t) Source Current,IS(A) t,TIME (ns) MOT50N03C MOT50N03D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS(Cont.) www.mot-mos.com MOT50N03C MOT50N03D N-CHANNEL MOSFET n TO-251PACKAGE OUTLINE DIMENSIONS -5- www.mot-mos.com MOT50N03C MOT50N03D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com