MOT50N02D

MOT50N02C MOT50N02D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ( @V GS =10 V) RDS (on)Typ(@V GS=4.5 V) Symbol 2.Drain 20V 7mΩ 12mΩ 50A ID 1.Gate „ APPLICATIONS * Switching applications 3.Source 4 4  FEATURES * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified 1 2 3 1 2 3 TO-252 TO-251 Package Packing „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A MOT50N02D N/A MOT50N02C TO-252 TO-251 2500 pieces /Reel 70 pieces /Tube „ ORDER INFORMATION SYMBOL PARAMETER RATINGS UNIT V DSS 20 Drain-Source Voltage V ±12 VGSS V Gate-Source Voltage A 50 ID Continuous Drain Current 90 A I DM Pulsed Drain Current I AR 30 A Avalanche Current E AR 135 mJ Repetitive avalanche energy L=0.1mH PD 50 W Power Dissipation T +175 ℃ Junction Temperature J TSTG Storage Temperature -55 ~ +175 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX)  THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC -1- RATINGS 50 3 UNIT ℃/W ℃/W www.mot-mos.com MOT50N02C MOT50N02D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current SYMBOL Static Drain-Source On-Resistance Forward Transconductance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time TYP MAX UNIT VGS=0V, ID =250uA VDS=20V, VGS=0V VDS=0V, VGS=±12V 20 - - VGS(TH) ID(ON) VDS=VGS, ID =250uA VDS=5V, VGS=10V VGS=10V, ID=20A VGS=4.5V, ID=20A VDS=5V, ID=10A 0.4 100 - 0.7 - 1.1 - 7 12 35 8 13 - - 1230 - - 26.4 13.5 3.9 7.75 6.5 10 22.7 6.2 gFS CISS COSS CRSS 10V 4.5V MIN BVDSS IDSS IGSS RDS(ON) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS TEST CONDITIONS VDS=10V, VGS =0V, f=1MHz QG QGS QGD tD(ON) tR tD(OFF) tF VDS=10V, V GS=10V, ID=20A VGS=10V, VDS=10V, RL=0.6Ω, RG=3Ω -2- - 315 190 1 100 - www.mot-mos.com V µA nA V A mΩ S pF pF pF nC nC nC ns ns ns ns MOT50N02C MOT50N02D N-CHANNEL MOSFET  TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms 1400 1200 VDS 1000 90% 800 600 VGS 400 10% tD(ON) tD(OFF) 200 tTHL tTLH 0 0 200 400 600 800 Source to Drain Voltage,VSD (mV) 400 600 5 800 10 15 20 30 Drain Current, ID (A) 200 0.2 0.4 0.6 0.8 v 1.0 1.2 v -3- www.mot-mos.com MOT50N02C MOT50N02D N-CHANNEL MOSFET n TO-251 PACKAGE OUTLINE DIMENSIONS -4- www.mot-mos.com MOT50N02C MOT50N02D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -5- www.mot-mos.com