MOT50N06D

MOT50N06C MOT50N06D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ(@V GS =10 V) ID Symbol 60V 13mΩ 50A 2.Drain 1.Gate „ APPLICATIONS * Switching applications 3.Source 4  FEATURES 4 * High Switching Speed * Improved dv/dt capability 1 2 3 TO-252 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A N/A Package MOT50N06D MOT50N06C TO-252 TO-251 1 2 3 TO-251 Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 150 A Avalanche Energy Single Pulsed (Note 3) EAS 92 mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation 46 W TO-251/TO-252 PD Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=43mH, IAS=43A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD ≤ 30A, VDS=0V, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C -1- www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER Off characteristics SYMBOL Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse On characteristics BVDSS IDSS Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic characteristics VGS(TH) RDS(ON) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching characteristics IGSS CISS COSS CRSS TEST CONDITIONS 60 - - VDS=VGS, ID=250μA VGS=10V, ID=25A 1.0 - - VDS=50V, VGS=10V, ID=1.3A IG=3mA (Note1,2) VDS=30V, VGS=10V, ID=50A, RG=25Ω (Note1,2) Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=50A, VGS=0V Body Diode Reverse Recovery Time trr IS=30A, VGS=0V, dIS/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Essentially independent of operating temperature. -2- TYP MAX UNIT VGS=0V, ID=250μA VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V VGS=0V, VDS=25V, f=1MHz Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Drain-source diode characteristics and maximum ratings MIN 10 100 -100 V μA nA nA V 13 2.5 18 mΩ - 2500 230 200 - pF pF pF - 7.2 0.4 0.8 18 46 202 116 - nC nC nC ns ns ns ns - - 50 A - - 150 A - 50 80 1.5 V ns nC - www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms -3- www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS(Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS Same Type as D.U.T. QG VDS QGS QGD VGS DUT Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit -4- Fig. 4B Unclamped Inductive Switching Waveforms www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET  TYPICAL CHARACTERISTICS -5- www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET  TYPICAL CHARACTERISTICS(Cont.) -6- www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com MOT50N06C MOT50N06D N-CHANNEL MOSFET n TO-251 PACKAGE OUTLINE DIMENSIONS -8- www.mot-mos.com