HBAT54C

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 1/3 HBAT54\A\C\S Description Silicon Schottky Barrier Double Diodes Features These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices. SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................. -65~+125 °C Junction Temperature .................................................................................................... +125 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 230 mW • Maximum Voltages and Currents (Ta=25°C) Repetitive Peak Reverse Voltage ........................................................................................ 30 V Forward Continuous Current .......................................................................................... 200 mA Repetitive Peak Forward Current .................................................................................. 300 mA Surge Forward Current (tp