0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HBAT54S

HBAT54S

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HBAT54S - Silicon Schottky Barrier Double Diodes - Hi-Sincerity Mocroelectronics

  • 数据手册
  • 价格&库存
HBAT54S 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 1/4 HBAT54 Series Description Silicon Schottky Barrier Double Diodes • HBAT54: Single Diode, also available as double diodes. • HBAT54A: Common Anode. • HBAT54C: Common Cathode. • HBAT54S: Series Connected. Diagram: 3 3 SOT-23 1 2 1 2 HBAT54 3 HBAT54A 3 Features These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices. 1 2 1 2 HBAT54C HBAT54S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................................................. -65~+125 °C Junction Temperature .................................................................................................................................... +125 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 230 mW • Maximum Voltages and Currents (TA=25°C) Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V Forward Continuous Current ......................................................................................................................... 200 mA Repetitive Peak Forward Current ................................................................................................................. 300 mA Surge Forward Current (tp
HBAT54S 价格&库存

很抱歉,暂时无法提供与“HBAT54S”相匹配的价格&库存,您可以联系我们找货

免费人工找货