HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 1/4
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes • HBAT54: Single Diode, also available as double diodes. • HBAT54A: Common Anode. • HBAT54C: Common Cathode. • HBAT54S: Series Connected.
Diagram:
3 3
SOT-23
1
2
1
2
HBAT54
3
HBAT54A
3
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices.
1 2 1 2
HBAT54C
HBAT54S
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature ............................................................................................................................. -65~+125 °C Junction Temperature .................................................................................................................................... +125 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 230 mW • Maximum Voltages and Currents (TA=25°C) Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V Forward Continuous Current ......................................................................................................................... 200 mA Repetitive Peak Forward Current ................................................................................................................. 300 mA Surge Forward Current (tp
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