HMBT9014

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation (PD: 225mW) • Complementary to HMBT9015 • High hFE and Good Linearity SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................................... 50 V VCEO Collector to Emitter Voltage ........................................................................................................................ 45 V VEBO Emitter to Base Voltage ................................................................................................................................ 5 V IC Collector Current ........................................................................................................................................ 100 mA Electrical Characteristics (TA=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) *hFE Cob fT Min. 50 45 5 0.58 100 150 Typ. 0.14 0.84 0.63 280 2.20 270 Max. 50 50 0.3 1 0.7 1000 3.5 pF MHz Unit V V V nA nA V V V IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=1mA VCB=10V, f=1MHz, IE=0 VCE=5V, IC=10mA *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Test Conditions Classification on hFE Rank (Marking Code) Range B (C4B) 100-300 C (C4C) 200-600 D (C4D) 400-1000 HMBT9014 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 o Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 2/5 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=20IB 125 C Saturation Voltage (mV) 25 C o 25 C 100 125 C o o hFE 75 C 100 o 75 C o hFE @ VCE=5V 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB 10000 Saturation Voltage & Collector Current VBE(sat) @ IC=20IB Saturation Voltage (mV) 75 C 100 125 C 25 C o o o Saturation Voltage (mV) 75 C 1000 25 C o o 125 C o 10 0.1 1 10 100 100 0.1 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(ON) & Collector Current 10000 VBE(ON) @ VCE=5V Saturation Voltage (mV) 75 C 1000 25 C o o VBE(ON) (mV) 75 C 1000 25 C o o 125 C VBE(s at) @ IC=10IB o 125 C o 100 0.1 1 10 100 1000 100 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) HMBT9014 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 3/5 Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz). . Capacitance (pF) VCE=1V 100 10 Cob 1 0.1 10 1 10 100 1 10 100 1000 Reverse-Biased Voltage (V) Collector Current (mA) HMBT9014 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L Rank Code (B,C,D) Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 4/5 C4 3 Pb Free Mark BS 1 2 Pb-Free: " " (Note) Normal: None V G Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBT9014 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly