2SD1757K

2SD1757K TRANSISTOR (NPN) FEATURES Optimal for muting. SOT-23 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 15 6.5 500 200 150 -55-150 Units V V V mA mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=50μA,IE=0 IC=1mA,IB=0 IE=50μA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=100mA IC= 500mA, IB=50mA VCE=5V, IC= 50mA ,f=100MHz VCB=10V,IE=0,f=1MHZ 150 15 120 conditions MIN 30 15 6.5 0.5 0.5 560 0.4 V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range MARKING hFE Q 120-270 AAQ R 180-390 AAR S 270-560 AAS １　 JinYu semiconductor www.htsemi.com 2SD1757K ２　 JinYu semiconductor www.htsemi.com