KTA1664

KTA1664 TRANSISTOR (PNP) FEATURES Complementary to KTC4376 Small Flat Package High Current Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -35 -30 -5 -800 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min -35 -30 -5 -100 -100 100 35 -0.7 -0.5 19 120 -0.8 V V pF MHz 320 Typ Max Unit V V V nA nA IC= -1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCB=-35V,IE=0 VEB=-5V,IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA,IB=-20mA VCE=-1V, IC=-10mA VCB=-10V,IE=0, f=1MHz VCE=-5V,IC= -10mA CLASSIFICATION OF hFE RANK RANGE MARKING O 100–200 RO Y 160–320 RY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５