KTA1664

KTA1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 40 32 5.0 1.0 0.5 -55 to +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=50µA, I E=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 40 32 5 Typ Max 0.5 0.5 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=1mA, I B=0 Emitter-Base Breakdown Voltage IE=50µA, I C =0 Collector Cuto Current VCB=20V, I E=0 Collector Cuto Current VEB =4V, I C=0 WEITRON http://www.weitron.com.tw 1/3 11-Dec-08 KTA1664 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE=3V, I C =100mA Collector-Emitter Saturation Voltage IC=0.5A, I B=50mA hFE VCE(sat) 82 390 0.4 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=5V, I C =50mA f=100MHz Output Capacitance VCB=10V, I E=0, f=1MHz fT Cob 150 15 MHz pF CLASSIFICATION OF hFE Rank Range Marking P 82-180 DAP Q 120-270 DAQ R 180-390 DAR WEITRON http://www.weitron.com.tw 2/3 11-Dec-08 KTA1664 SOT-89 Outline Dimensions unit:mm SOT-89 E G Dim A Min Max J C H K L B D A B C D E G H J K L 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500 TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 3/3 11-Dec-08