GA150TS60U

PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.7V @VGE = 15V, IC = 150A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 150 300 300 300 ±20 2500 440 230 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3 T Weight of Module Typ. — — 0.1 — — 200 Max. 0.28 0.35 — 6.0 5.0 — Units °C/W N. m g www.irf.com 1 05/20/02 GA150TS60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 — — VGE = 0V, IC = 1mA — 1.7 2.3 VGE = 15V, IC = 150A — 1.7 — V VGE = 15V, IC = 150A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 750µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = V GE, IC = 750µA Forward Transconductance T — 152 — S VCE = 25V, I C = 150A Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 600V — — 10 VGE = 0V, VCE = 600V, TJ = 125°C Diode Forward Voltage - Maximum — 3.3 — V IF = 150A, VGE = 0V — 3.2 — IF = 150A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 624 87 212 241 145 336 227 6.0 12 19 14000 860 180 172 113 9696 2000 Max. Units Conditions 937 VCC = 400V 130 nC IC = 94A 317 TJ = 25°C — RG1 = 27Ω, RG2 = 0Ω, — ns IC = 150A — VCC = 360V — VGE = ±15V — mJ — 33 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 150A — A RG1 = 27Ω — nC RG2 = 0Ω — A/µs VCC = 360V di/dt =1300A/µs 2 www.irf.com GA150TS60U 120 F o r b o th : 100 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 92 W S q u a re w a v e : 80 60 6 0 % o f ra te d v o lta g e I 40 Id e a l d io d e s 20 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 25 o C  TJ = 125 o C  TJ = 125 oC  100 100 TJ = 25 oC  10 10 1 2 V = 15V  20µs PULSE WIDTH GE 3 1 5 6 7 V = 50V  5µs PULSE WIDTH VCE = 25V CC 25V 80µs PULSE WIDTH 8 9 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA150TS60U 160 3.0 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A) 120  I C = 300 A 80 2.0  I C = 150 A  I C = 75 A 40 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Th erm a l Im p e d an ce - Z th J C D = 0 .5 0 0.1 0 .20 0 .1 0 0 .05 0 .02 0 .0 1 S in g le P u ls e ( Th e rm a l R e sis ta n c e ) Notes: 1. Duty factor D = t P DM t 1 t2 1 /t 2 2. Peak TJ = PDM x Z thJC + T C 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , R ec ta n g ular P u lse D u ra tio n ( Se c o n d s ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA150TS60U 25000 20000 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 94A 16 C, Capacitance (pF) Cies  15000 12 10000 8 C oes 5000 C res 4 0 1 10 100 0 0 100 200 300 400 500 600 700 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 30 Total Switching Losses (mJ) 25 Total Switching Losses (mJ)  V CC = 360V V GE = 15V 125°C TJ = 25 ° C I C = 150A 100  RG =27Ω;RG2 = 0 Ω G1 = Ohm VGE = 15V VCC = 360V  IC = 300 A  IC = 150 A 20 10  IC = 75 A 15 10 0 10 20 30 40 50 RG1 Gate Resistance (Ω) RG , ,Gate Resistance (Ohm) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA150TS60U 50 Total Switching Losses (mJ) T J = 150 ° C VCC = 360V 40 VGE = 15V  RG =27Ω;RG2 = 0 Ω G1 = Ohm 400 350 V G E = 2 0V T J = 125°C V C E m easured at term inal ( Peak V olta g e ) 300 250 30 200 S AFE O PERATING AREA 20 150 100 10 50 0 0 50 100 150 200 250 300 0 0 100 200 300 400 500 600 A 700 I C , Collector-to-emitter Current (A) VCE , C ollector-to-Emitter Voltag e ( V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 16000 I F = 3 00 A In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) I F = 1 50 A I F = 75 A 12000 100 T J = 125 °C T J = 25°C Q R R - (nC ) 8000 4000 VR = 3 6 0V TJ = 1 25 °C TJ = 2 5°C 10 1.0 2.0 3.0 4.0 5.0 0 500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V F M (V ) di f /dt - ( A / µ s ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA150TS60U 300 200 I F = 30 0A I F = 15 0A I F = 75 A 200 160 I F = 30 0A I F = 15 0A I F = 75 A I R R M - (A ) 100 t rr - (ns) 120 80 40 VR = 3 6 0V TJ = 1 25 °C TJ = 2 5°C 0 500 1000 1500 2000 0 500 VR = 3 6 0V T J = 1 25 °C T J = 2 5°C 1000 1500 2000 d i f /dt - ( A / µ s ) di f /dt - ( A / µ s ) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA150TS60U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e Ic Vceic d tdt t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA150TS60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit RL= 0 - 480V 480V 4 X IC @25°C Figure 22. Pulsed Collector Current Test Circuit www.irf.com 9 GA150TS60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T For screws M5. U Pulse width 50µs; single shot. Case Outline — INT-A-PAK 94.70 93.70 80.30 79.70 3.689 [3.728] NOTES : 1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2. CONTROL LING DIMENS ION: MILLIMETER. 4.50 3.50 6 7 17.50 16.50 1 8 9 2 3 5 4 6.80 2X Ø 6.20 .244 [.267] 4X FAST ON TAB (110) 2.8 x 0.5 [.110 x .020] .650 [.689] .138 [.177] [] 3.161 3.138 2X 23.50 22.50 .886 [.925] 11 10 34.70 33.70 1.327 [1.366] 3X M5 8 [.314] MAX. 42.00 41.00 1.614 [1.654] 8.00 6.60 .260 [.315] 24.00 23.00 .906 [.945] 30.50 29.00 1.142 [1.201] 0.15 [.0059] CONVEX 92.10 91.10 3.587 [3.626] 8.65 7.65 .301 [.341] 32.00 31.00 2X 13.30 12.70 .500 [.524] [] 1.260 1.220 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.