GA100TS60U

PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL recognition pending Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.6V @VGE = 15V, IC = 100A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current• Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 100 200 200 200 ±20 2500 320 170 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. — — 0.1 — — 200 Max. 0.38 0.70 — 4.0 3.0 — Units °C/W N.m g www.irf.com 1 4/24/2000 GA100TS60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 — — VGE = 0V, IC = 1mA — 1.6 2.1 VGE = 15V, IC = 100A — 1.6 — V VGE = 15V, IC = 100A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 500µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = V GE, IC = 500µA Forward Transconductance „ — 107 — S VCE = 25V, I C = 100A Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 600V — — 10 VGE = 0V, VCE = 600V, TJ = 125°C Diode Forward Voltage - Maximum — 3.6 — V IF = 100A, VGE = 0V — 3.5 — IF = 100A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 100 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 443 86 150 168 145 320 242 4.0 7.0 11 9837 615 128 143 95 6813 1883 Max. Units Conditions 664 VCC = 400V 129 nC IC = 66A 225 TJ = 25°C — RG1 = 27Ω, RG2 = 0Ω — ns IC = 100A — VCC = 360V — VGE = ±15V — mJ — 17 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 100A — A RG1 = 27Ω — nC RG2 = 0Ω — A/µs VCC = 360V di/dt »1300A/µs 2 www.irf.com GA100TS60U 100 F o r b o th : 80 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 73 W S q u a re w a v e : 60 % of ra ted vo ltag e 60 40 I Id e a l d io d e s 20 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 125 o C 100 TJ = 25 ° C TJ = 125 ° C 100 TJ = 25 o C 10 10 0.8 V GE = 15 V 20µs PULSE WIDTH 1.2 1.6 2.0 2.4 1 5 6 7 VVCE = 50V CC = 25V 5µs PULSE WIDTH 80µs PULSE WIDTH 8 9 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA100TS60U 120 2.5 100 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) I C = 200 A 2.0 80 60 I C = 100 A 1.5 40 20 I C = 50 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T h e rm a l Im p ed a n ce - Z th J C D = 0 .5 0 0 .20 0 .10 0 .05 0 .02 0 .01 S in g le P u ls e ( T h e rm a l R e sis ta n c e ) Notes: 1. Duty factor D = t 0.1 P DM t 1 t2 1 /t 2 2. Peak TJ = PDM x Z thJC + T C 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , R e c ta n g ular Pu lse D u ra tio n ( S e co n d s ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA100TS60U 20000 16000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 66A 16 C, Capacitance (pF) Cies 12000 12 8000 8 Coes 4000 Cres 4 0 1 10 100 0 0 100 200 300 400 500 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 18 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 360V V GE = 15V 125 C TJ = 25 °°C 16 I C = 100A 100 RG =15Ω;RG2 = 0 Ω G1 = Ohm VGE = 15V VCC = 360V IC = 200 A 14 IC = 100 A 10 12 IC = 50 A 10 8 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG G1Gate Resistance (Ohm) R , , Gate Resistance (Ω) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA100TS60U 30 RG =15OhmG2 = 0 Ω G1 = Ω;R 300 Total Switching Losses (mJ) T J = 150 ° C VCC = 0V 25 VGE = 15V 20 250 V G E = 2 0V T J = 125 ° C V C E m easured at term inal ( Peak V olta g e ) 200 15 150 S AFE O PERATING AREA 10 100 5 50 0 0 40 80 120 160 200 0 0 100 200 300 400 500 600 A 700 I C , Collector-to-emitter Current (A) VCE , C ollector-to-Emitter Voltag e ( V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 12000 I F = 2 00 A In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10000 I F = 1 00 A I F = 5 0A 8000 100 Q R R - (nC ) T J = 125 ° C T J = 25 ° C 6000 4000 2000 VR = 36 0 V TJ = 12 5 ° C TJ = 25 ° C 10 1.0 2.0 3.0 4.0 5.0 0 500 1000 1500 2000 F o rwa rd V o lta g e D ro p - V FM ( V ) di f /dt - ( A / µ s ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA100TS60U 240 150 VR = 3 6 0V TJ = 1 25 ° C TJ = 2 5 ° C I F = 2 00 A I F = 1 00 A I F = 50 A 120 I F = 2 00 A I F = 1 00 A I F = 50 A 200 I IR R M - (A ) t rr - (n s) 90 160 60 120 30 VR = 3 6 0 V TJ = 1 2 5 °C TJ = 2 5 °C 80 500 1000 1500 2000 0 500 1000 1500 2000 di f /dt - ( A / µ s ) d i f /d t - ( A / µ s ) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA100TS60U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e Ic Vceic d tdt t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA100TS60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit RL= 0 - 480V 480V 4 X IC @25°C Figure 22. Pulsed Collector Current Test Circuit www.irf.com 9 GA100TS60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M5x0.8 T Pulse width 80µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com