GA200TS60U

PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C I CM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 200 400 400 400 ±20 2500 625 325 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ Weight of Module Typ. — — 0.1 — — 200 Max. 0.20 0.35 — 4.0 3.0 — Units °C/W N. m g www.irf.com 1 3/20/98 GA200TS60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — VGE = 0V, IC = 1mA Collector-to-Emitter Voltage — 1.8 2.2 VGE = 15V, IC = 200A — 1.9 — V VGE = 15V, IC = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 IC = 1.25mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.25mA gfe Forward Transconductance „ — 175 — S VCE = 25V, IC = 200A ICES Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 600V — — 10 VGE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.7 — V IF = 200A, VGE = 0V — 3.7 — IF = 200A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V V(BR)CES VCE(on) Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 903 125 306 342 194 366 213 12 16 28 20068 1254 261 179 120 10714 1922 Max. Units Conditions 1355 VCC = 400V, VGE = 15V 188 nC IC = 135A 459 TJ = 25°C — RG1 = 27Ω, RG2 = 0Ω, — ns IC = 200A — VCC = 360V — VGE = ±15V — mJ — 39 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 200A — A RG1 = 27Ω — µC RG2 = 0Ω — A/µs VCC = 360V di/dt=1300A/µs 2 www.irf.com GA200TS60U 140 F or b oth: 120 LOAD CURRENT (A) 100 D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified P ow er D is s ipation = 120 W 80 S q u a re w a v e: 60% of rated v oltage I 60 40 Ide a l d io d e s 20 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 125 ° C TJ = 125 ° C 100 TJ = 25 ° C 10 TJ = 25 ° C 10 0.5 V GE = 15V 80µs PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 1 5.0 V CE = 25V 80µs PULSE WIDTH 6.0 7.0 8.0 9.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA200TS60U 240 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 400 A Maximum DC Collector Current(A) 200 160 120 2.0 IC = 200 A 80 IC = 100 A 40 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T he rm a l R e sp on s e (Zth JC ) 0.1 D = 0.50 0.20 0.10 0.05 0 .02 0.01 P DM S IN G LE P U LS E (TH E R M A L R E S P O N S E ) t 1 t2 Notes: 1. Duty factor D = t 1 / t2 0.01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 1000 0.001 0.01 0.1 1 10 100 t 1 , R e cta n g u la r P u ls e D u ra tio n ( se c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA200TS60U 40000 VGE , Gate-to-Emitter Voltage (V) VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc 20 VCC = 400V I C = 135A 16 C, Capacitance (pF) 30000 Cies 12 20000 8 Coes 10000 Cres 4 0 1 10 100 0 0 200 400 600 800 1000 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 40 Total Switching Losses (mJ) 35 Total Switching Losses (mJ) V CC V GE TJ IC = 360V = 15V = 125 ° C = 200A 1000 RG1=27Ohm = 0 Ω G = Ω;RG2 VGE = 15V VCC = 360V 100 IC = 400 A IC = 200 A IC = 100 A 30 10 25 20 0 10 20 30 40 50 ( Ω) RG , Gate Resistance (Ohm) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ° C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA200TS60U 70 Total Switching Losses (mJ) RG =27Ω;RG2 = 0 Ω G1 = Ohm T J = 125° C 60 VCC = 360V VGE = 15V 50 600 V G E = 2 0V T J = 125°C VCE measured at terminal (Peak Voltage) 500 400 40 300 S AFE OPERATING AREA 30 200 20 100 10 0 0 100 200 300 400 0 0 100 200 300 400 500 600 A 700 I C , Collector-to-emitter Current (A) VCE , Collector-to-E mitter Volta g e ( V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 20000 IF = 400A In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 15000 I F = 200A I F = 100A 100 TJ = 25°C TJ = 125°C Q R R - (n C ) 10000 5000 VR = 3 6 0 V T J = 1 2 5 °C T J = 2 5 °C 10 1.0 2.0 3.0 4.0 5.0 6.0 0 500 1000 F o rw a rd V o lta g e D ro p - V FM ( V ) d i f /d t - (A /µ s) 1500 2000 Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA200TS60U 225 250 200 IF = 4 0 0 A I = 200A F I = 100A F 200 IF = 400 A IF = 200 A I F = 100 A 175 - (A ) I RR M 150 125 100 trr - (n s) 150 100 50 VR = 3 6 0 V T J = 1 2 5 °C TJ = 2 5 ° C 75 500 1000 VR = 3 6 0 V T J = 1 2 5 °C T J = 2 5 °C d i f /d t - ( A / µ s ) 1500 2000 0 500 1000 d i f /d t - ( A / µ s ) 1500 2000 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA200TS60U 90% V ge +V ge V ce Ic 10% V ce Ic 90% Ic 5% Ic td (off) tf E off = ∫ Vce Ic dt t1+5µ S V ce ic dt t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = ∫ trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 ∫ E rec = ∫ t4 V d idIc dt Vd dt t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA200TS60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µ F 100 V Vc* D.U.T. R L= 0 - 480V 480V 4 X IC @25°C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA200TS60U Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ‚ See fig. 17 ƒ For screws M5x0.8 „ Pulse width 50µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 10 www.irf.com