BSS63

BCX42, BSS63 PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX41, BSS64 (NPN) 3



2 1 VPS05161 Type BCX42 BSS63 Maximum Ratings Parameter Marking DKs BMs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BSS63 100 110 5 BCX42 125 125 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 800 1 100 200 330 150 -65 ... 150 mA A mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCX42, BSS63 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 Collector cutoff current VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C DC current gain 1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 20 mA, VCE = 5 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX42 BSS63 BSS63 BCX42 BCX42 BCX42 BCX42 hFE 25 30 30 63 40 ICEO 10 75 BSS63 BCX42 IEBO BSS63 BCX42 ICBO 20 20 100 ICBO 100 100 BSS63 BCX42 V(BR)EBO BSS63 BCX42 V(BR)CBO 110 125 5 V(BR)CEO 100 125 typ. max. Unit V nA µA nA µA - 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-10-2001 BCX42, BSS63 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 25 mA, IB = 2.5 mA IC = 75 mA, IB = 7.5 mA Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 pF fT 150 MHz BCX42 BCX42 BSS63 BSS63 VBEsat VCEsat 0.9 0.25 0.9 1.4 V Symbol min. Values typ. max. Unit 3 Jul-10-2001 BCX42, BSS63 Total power dissipation Ptot = f(TS) Collector current I C = f (VBE) VCE = 1V 10 3 mA BCX 42/BSS 63 EHP00429 360 mW 300 270 ΙC 10 2 5 TA = 150 ˚C 25 ˚C -50 ˚C P tot 240 210 180 150 120 90 60 30 0 0 10 1 5 10 5 0 10 -1 15 30 45 60 75 90 105 120 °C 150 TS 0 1 2 V VBE 3 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCX 42/BSS 63 EHP00430 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz T BCX 42/BSS 63 EHP00431 D= tp T tp fT 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC 4 Jul-10-2001 BCX42, BSS63 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 mA BCX 42/BSS 63 EHP00432 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 3 BCX 42/BSS 63 EHP00433 10 mA ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C ΙC 10 5 2 150 ˚C 25 ˚C -50 ˚C 10 1 5 10 5 1 10 5 0 10 5 0 10 -1 0 1 2 V VBE sat 3 10 -1 0 200 400 600 mV 800 VCE sat Collector cutoff current ICBO = f (TA) VCB = 100V 10 4 nA BCX 42/BSS 63 EHP00434 DC current gain hFE = f (I C) VCE = 1V 10 3 BCX 42/BSS 63 EHP00435 Ι CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 max h FE 5 150 ˚C 25 ˚C -50 ˚C 10 2 typ 5 0 50 100 ˚C TA 150 10 1 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Jul-10-2001