BSS63

BSS63 SMALL SIGNAL PNP TRANSISTOR Type BSS63 s Marking T3 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW FREQUENCY APPLICATONS NPN COMPLEMENT IS BSS64 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -110 -100 -6 -0.1 -0.2 200 -65 to 150 150 Unit V V V A A mW o o C C 1/4 BSS63 THERMAL DATA R t hj-amb • R th j-SR • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 500 o o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = -90 V V CB = -90 V V EB = -5 V I C = -10 µ A -110 T j = 150 o C Min. Typ . Max. -100 -50 -200 Un it nA µA nA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Emitter-Base Saturation Voltage DC Current G ain Transition F requency Collector Base Capacitance I C = -10 mA -100 V I E = -10 µ A -6 V V CE(sat )∗ V BE(s at)∗ hFE∗ fT C CB I C = -25 mA I C = -75 mA I C = -25 mA I C = -10 mA I C = -25 mA IB = -2.5 mA IB = -7.5 mA IB = -2.5 mA V CE = -1 V V CE = -1 V 30 30 50 3 -0.25 -0.9 -0.9 V V V I C = -25 mA V CE = -5 V f = 100 MHz I E = 0 mA V CB = -10 V f = 1MHz MHz pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 BSS63 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BSS63 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4