BSS63

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 7 BSS63 C B E COMPLIMENTARY TYPE — PARTMARKING DETAIL — BSS64 BSS63 - T3 BSS63R - T6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transition Frequency SYMBOL V(BR) V(BR)CEO V(BR)EBO IEBO IEBO VCE(sat) VBE(sat) 30 30 50 Typ 85 Typ. 3 MHz MIN. -110 -100 -6 -100 -50 -200 -250 -900 SYMBOL VCBO VCEO VEBO IC PTOT t j:tstg MAX. VALUE -110 -100 -6 -100 330 -55 to +150 UNIT CONDITIONS. V V V nA nA mV mV IC=-10µ A IC=-100µ A* IE=-10µ A VCB=-90V, VCB=-90V,Tamb=150oC VEB=-6V IC=-25mA, IB=-2.5mA IC=-25mA, IB=-2.5mA IC=-10mA, VCE=-1V IC=25mA, VCE=1V VCE=-5V, IC=25mA f=35 MHz VCB=-10V, f=1MHz UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). µA hFE fT Output Capacitance Cobo pF * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER