BTS949_00

HITFET=BTS 949 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 9.5 19 V mΩ A A 6000 mJ limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible 1 5 VPT05166 Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits 1 5 VPT05165 General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions. V bb + 2 NC Drain LOAD M 3 1 IN dv/dt limitation Current limitation Overvoltage protection 4 CC Overtemperature protection ESD R CC Overload protection Short circuit Short circuit protection protection Source 5 HITFET Page 1 07.06.2000 BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 Ω, ID =0,5*19A td = 400 ms, RI = 2 Ω, ID = 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 110 92 E 40/150/56 3000 V EAS 6000 mJ Tj Tstg Ptot IIN no limit | IIN | ≤ 2 - 40 ... +150 - 55 ... +150 240 W °C Symbol VDS VDS(SC) 15 50 mA Value 60 Unit V Thermal resistance junction - case: junction - ambient: SMD version, device on PCB:3) RthJC RthJA RthJA 0.7 75 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Page 2 07.06.2000 BTS 949 Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 3,9 mA Input current - normal operation, ID 2 mA @ VIN >10V. Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Page 5 07.06.2000 BTS 949 Maximum allowable power dissipation Ptot = f(Tc ) BTS 949 On-state resistance RON = f(Tj ); ID=19A; VIN =10V 40 260 W mΩ 30 220 180 Ptot RDS(on) 200 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 25 max. 20 typ. 15 10 5 160 0 -50 -25 0 25 50 75 100 °C 150 Tj On-state resistance RON = f(Tj ); ID= 19A; V IN=5V 45 Typ. input threshold voltage VIN(th) = f(Tj); ID =3,9A; VDS=12V 2.0 V mΩ 35 1.6 RDS(on) 30 max. VIN(th) typ. 1.4 1.2 1.0 25 20 15 10 5 0 -50 0.8 0.6 0.4 0.2 -25 0 25 50 75 100 °C 150 0.0 -50 -25 0 25 50 75 100 °C 150 Tj Page 6 Tj 07.06.2000 BTS 949 Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj =25°C 160 A A Typ. short circuit current IDlim = f(Tj); RCC =0Ω, VDS =12V Parameter: VIN 250 10V 9V 8V 120 ID ID 100 150 7V 80 100 6V 5V 60 40 50 20 4V 3V 0 0 1 2 3 4 5 V 7 0 -50 -25 0 25 50 75 100 °C 150 VIN Tj Typ. output characteristic I D = f(VDS); T j=25°C Parameter: VIN 150 10V A 6V Safe Operating Area ID(SC) = f(VDS ); Tj =25°C 300 A 100 200 5V ID 75 ID 150 4V 50 100 25 VIN=3V 50 0 0 1 2 3 4 5 V 7 0 0 10 20 30 V 50 VDS Page 7 VDS 07.06.2000 BTS 949 Typ. current limit versus RCC ID(lim) = f(RCC ); Tj=25°C Parameter: VIN 250 A 10V Typ. current sense characteristics VCC = f(ID); VIN=10V Parameter: RCC , Tj 600 mV no Rcc 200 175 150 125 100 75 50 25 0 -2 10 -1 0 1 2 4 500 450 VCC ID 400 350 300 250 125°C 25°C 82 Ohm 47 Ohm 5V 200 150 100 50 22 Ohm 10 10 10 10 10 Ω RCC 0 0 10 20 30 40 50 A 65 ID Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 0 K/W D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 10 -1 Z thJC 10 -2 10 -3 0 10 -4 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 2 tP Page 8 07.06.2000 BTS 949 Application examples: Current Sense Features and Status Signals IN D S V bb µC V CC HITFET CC RCC IN open load thermal shutdown V cc V cc reached triptemperature The accuray of Vcc is at each temperature about ±10 % Status signal of thermal shutdown by monitoring input current R St IN D S V bb µC V IN HITFET CC ∆V V IN thermal shutdown ∆V = RST *IIN(3) Page 9 07.06.2000 BTS 949 Package P-TO220-5-62 Ordering Code Q67060-S6703-A4 4.4 9.9 8 1.3 0.2 2.4 Package P-TO220-5-3 9.9 9.5 3.7 Ordering Code Q67060-S6703-A2 4.4 1.3 15.6 12.8 10.5 9.2 3) 9.75 5 2) 1) 5.6 15˚ 0.5 4.5 8.2 GPT05165 3.6 1.5 1.5 0.8 1.7 4x1.7=6.8 0.8 0.2 4 x 1.7 = 6.8 M 2.4 1.7 0.5 GPT05166 1) shear and punch direction no burrs this surface 1) shear and punch direction no burrs this surface 2) min. length by tinning 3) max. 11 mm allowable by tinning Package P-TO220-5-43 9.9 9.5 3.7 Ordering Code On request 4.4 1.3 15.6 2.8 12.8 1) 1 0.8 1.7 4 x 1.7 = 6.8 0,3 M 13.5 3) 2) 0.5 2.4 GPT05896 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 14.5 by dip tinning press burr max. 0.05 radii not dimensioned max. 0.2 9.2 Page 10 07.06.2000 9.2 1) 2.8 BTS 949 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 07.06.2000