IR03H420

Data Sheet No. PD-6.077 IR03H420 HIGH VOLTAGE HALF-BRIDGE Features Product Summary VIN (max) ton/off trr RDS(on) PD ( TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout n 5V Schmitt-triggered input logic n Half-Bridge output in phase with HIN n Cross conduction prevention logic n Internally set dead time Description The IR03H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Package IR03H420 9506 Typical Connection UP V IN TO 500V DC BUS IR 0 3 H 4 2 0 V CC 1 V CC V B 6 H IN 2 H IN 9 V IN L IN 3 L IN VO 7 TO 4 COM LO AD COM IR03H420 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VIH/VIL VCC dv/dt PD RθJA TJ TS TL Parameter Definition High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage Logic Input Voltage (HIN & LIN) Low Side and Logic Fixed Supply Voltage Peak Diode Recovery dv/dt Package Power Dissipation @ TA ≤ +25ºC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) Min. -0.3 -0.3 -0.3 -0.3 -0.3 -------55 -55 --- Max. 500 525 VIN + 0.3 VCC + 0.3 25 3.5 2.00 60 150 150 300 Units V V/ns W ºC/W ºC Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol VB VIN VO VCC VIH/VIL ID TA Note 1: Parameter Definition High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Low Side and Logic Fixed Supply Voltage Logic Input Voltage (HIN & LIN) Continuous Drain Current (TA = 25ºC) (TA = 85ºC) Ambient Temperature Min. VO + 10 --(note 1) 10 0 -----40 Max. VO + 20 500 500 20 VCC 0.7 0.5 125 Units V A ºC Logic operational for VO of -5 to 500 V. Logic state held for VO of -5 to - VB. IR03H420 Dynamic Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol ton toff tr tf MT DT trr Qrr Parameter Definition Turn-On Propagation Delay (see note 2) Turn-Off Propagation Delay (see note 2) Turn-On Rise Time (see note 2) Turn-Off Fall Time (see note 2) Delay Matching, HS & LS Turn-On/Off Deadtime, LS Turn-Off to HS Turn-On & HS Turn-On to LS Turn-Off Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) TA = 25ºC Min. Typ. Max. Units Test Conditions ----------------600 90 80 40 30 500 260 0.7 720 200 120 70 --750 ----IF = 0.7 A di/dt = 100A/µs VS = 0 V VS = 500 V ns µC Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol Parameter Definition TA = 25ºC Min. Typ. Max. Units 8.8 7.5 ------2.7 ----------9.3 8.2 140 20 ------20 --3.0 0.8 9.8 V 8.6 240 50 50 --0.8 40 1.0 ----- Test Conditions Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold VCCUV- VCC Supply Undervoltage Negative Going Threshold IQCC Quiescent VCC Supply Current IQBS Quiescent VBS Supply Current IOS Offset Supply Leakage Current Input Characteristics VIH Logic “1” Input Voltage VIL Logic “0” Input Voltage IIN+ Logic “1” Input Bias Current IINLogic “0” Input Bias Current Output Characteristics RDS(on) Static Drain-to-Source On-Resistance VSD Diode Forward Voltage µA VB = VS = 500V V µA µA Ω V ID = 700mA Tj = 150 ºC VCC = 10V to 20V IR03H420 Functional Block Diagram VB 6 1 IRFC420 VIN 9 V CC 2 HIN ___ LIN 3 IRFC420 IR2103 7 VO 4 COM Lead Definitions Symbol VCC HIN LIN VB VIN VO COM Lead Description Logic and internal gate drive supply voltage. Logic input for high side Half Bridge output, in phase Logic input for low side Half Bridge output, out of phase High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. High voltage supply. Half-Bridge output. Logic and low side of Half-Bridge return. Lead Assignments 1 2 3 4 6 VB 7 V0 9 VIN VCC HIN LIN COM 9 Lead SIP w/o Leads 5 & 8 IR03H420 IR03H420 HIN 50% 50% HIN ton tr 90% toff 90% tf ___ LIN HO 10% 10% V+ VO 0 VO Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions ___ LIN HIN HIN 50% LO 50% HO LIN 50% 50% 90% MT 10% 90% LO HO 10% MT LO 90% DT HO 10% Figure 4. Deadtime Waveform Definitions Figure 3. Delay Matching Waveform Definitions IR03H420 Package Outline WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • (310)322-3331 • FAX (310)322-3332 • TELEX 472-0403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • (44)0883 713215 • FAX (944)0883 714234 • TELEX 95219 Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 1996 International Rectifier Printed in U.S.A. 3-96 Data and specifications subject to change without notice.