INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1186
DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
-2
A
PC
100
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -25mA ; IB= 0 IC= -5.0A; IB= -0.5A
B
2SA1186
MIN -150
TYP.
MAX
UNIT V
-2.0 -100 -100 50 110 60 180
V μA μA
VCB= -150V ; IE=0 VEB= -5V; IC=0 IC= -3A ; VCE= -4V IE= 0 ; VCB= -80V;f= 1.0MHz IE= 1A ; VCE= -12V
pF MHz
Switching times Turn-on Time Storage Time Fall Time IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V 0.25 0.8 0.2 μs μs μs
ton tstg tf
hFE Classifications O:50-80 O50 50-60 P:80-130 P80 80-90 Y:130-180 Y130 130-140 Y140 140-150 Y150 150-160 Y160 160-170 Y170 170-180 P90 90-100 P100 100-110 P110 110-120 P120 120-130 O60 60-70 O70 70-80
isc Website:www.iscsemi.cn
2
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