LAPT
2SA1186
Application : Audio and General Purpose
(Ta=25°C) 2SA1186 –100max –100max –150min 50min∗ –2.0max 60typ 110typ V pF
20.0min 4.0max
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1186 –150 –150 –5 –10 –2 100(Ta=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=1A VCB=–80V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
V
19.9±0.3
4.0
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45±0.1 B C E
sTypical Switching Characteristics (Common Emitter)
VCC (V) –60 RL (Ω) 12 IC (A) –5 VB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.8typ tf (µs) 0.2typ
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
00
–4
–2
0
0m
m
A
–16
0mA
Collector Current I C (A)
–8 0m A
–6
–2
Collector Current I C (A)
–8
mA –120 00mA –1
Collector-Emitter Saturation Voltage V CE(s a t) (V )
–10
A
–3
–10
–8
–6
–60mA
–4
Tem
p) Tem
(Ca
se
˚C
125
25˚
–5A
0
0
–1
–2
–3
–4
0
0
–0.5
–1.0
–1.5
–2.0
0
0
–30
–1 Base-Emittor Voltage V B E (V)
˚C (
C(
–2
–2
Ca
I B =–20m A
Cas
eT
se
–1
emp
–40mA
–4
p)
I C =–10A
)
–2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
h FE – I C Characteristics (Typical)
(V C E =–4V) 300
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V) 200 125˚C DC Curr ent Gain h FE
θ j -a (˚C/W)
θ j-a – t Characteristics
3
D C Cur r ent Gai n h F E
25˚C
100
Typ
100 –30˚C
Transient Thermal Resistance –1 –5 –10
1
50
0.5
50
20 –0.02
–0.1
–0.5
–1
–5
–10
30 –0.02
–0.1
–0.5
0.2
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =–12V) 80 –30
Safe Operating Area (Single Pulse)
100 M aximum Pow er Dissipat io n P C (W)
P c – T a Derating
Cut- off F requ ency f T (M H Z )
Collecto r Curren t I C (A)
60
Ty p
–10
10 ms
W ith In
–5
fin
D
C
ite he
40
50
at si nk
–1 Without Heatsink Natural Cooling
20 –0.5
0 0.02
0.1
1
10
–0.2 –2
–10
–100
–200
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Emitter Current I E (A)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
11
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