2SC3835G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC ICM Collector Current-Continuous 7 A Collector Current-Pulse 14 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3 A PC 70 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 3A; IB= 0.3A B 2SC3835G MIN 120 TYP. MAX UNIT V 0.5 1.2 100 100 160 30 110 220 V V μA μA IC= 3A; IB= 0.3A B VCB= 200V; IE= 0 VEB= 8V; IC= 0 IC= 3A ; VCE= 4V IE= -0.5A ; VCE= 12V IE=0 ; VCB=10V;ftest=1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC= 50V 0.5 3.0 0.5 μs μs μs isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G isc Website：www.iscsemi.cn