Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2522AF
DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base Collector current (DC) Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 1500 800 10 25 6 9 45 150 -65~150 UNIT V V A A A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2522AF
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter breakdown voltage
IC=0.1A ;IB=0;L=25mH
800
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=1mA ;IC=0 IC=6.0A ;IB=1.2A
7.5
13.5
V
Collector-emitter saturation voltage
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6.0A ;IB=1.2A VCE=BVCES; VBE=0 Tj=125℃ VEB=7.5V; IC=0
1.3 0.25 2.0 0.25
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2 CC
DC current gain
IC=6A ; VCE=5V IE=0 ; VCB=10V; f=1MHz
5
7
8
Collector capacitance
115
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2522AF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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