BU2522DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2522DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 10 25 6 9 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT K/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2522DF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 13.5 V VCE(sat) VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 5.0 V Base-Emitter Saturation Voltage IC= 6A ;IB= 1.2A VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ VEB= 7.5V; IC= 0 100 1.3 0.25 2.0 300 V Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 5 8 VECF C-E Diode Forward Voltage IF= 6A 2.0 V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 115 pF isc Website：www.iscsemi.cn