BU2522A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2522A DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 1500 800 10 25 6 9 125 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2522A SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.76A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.76A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 1.3 0.25 2.0 0.25 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 8 10 21 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 8 CC Collector capacitance VCB=10V;IE=0;f=1.0MHz 115 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2522A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3