BU508DFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DFI DESCRIPTION ・With TO-3PML package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU508DFI TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=1500V, VBE=0 Tj=125℃ VEB=5.0V; IC=0 1.3 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=5V 7 MHz VF Diode forward voltage IF=4A 2.0 V ts Storage time tf Fall time IC=4.5A ; VCC=140V IB=1.8A; LB=3mH LC=0.9mH 7 μs 0.55 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508DFI Fig.2 Outline dimensions 3