BUT12AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT12F BUT12AF ・ Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL VCBO PARAMETER BUT12F Collector-base voltage BUT12AF BUT12F VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage BUT12AF Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 8 20 4 6 23 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE 55 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUT12F VCEO(SUS) Collector-emitter sustaining voltage BUT12AF BUT12F VCEsat Collector-emitter saturation voltage BUT12AF BUT12F VBEsat Base-emitter saturation voltage BUT12AF BUT12F ICES Collector cut-off current BUT12AF IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=6A; IB=1.2A IC=0.1A; IB=0;L=25mH CONDITIONS BUT12F BUT12AF MIN 400 TYP. MAX UNIT V 450 1.5 IC=5A; IB=1A IC=6A; IB=1.2A 1.5 IC=5A; IB=1A VCE=850V ;VBE=0 Tj=125℃ VCE=1000V ;VBE=0 Tj=125℃ VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.0 3.0 V V mA 1.0 3.0 10 35 35 mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUT12AF IC=5A;IB1=-IB2=1A;VCC=250V 1.0 4.0 0.8 μs μs μs For BUT12F IC=6A;IB1=-IB2=1.2A;VCC=250V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT12F BUT12AF Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3