BUT12AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT12F BUT12AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT12F BUT12AF BUT12F BUT12AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 8 20 4 6 TC=25 23 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE 55 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS BUT12F BUT12AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=5A; IB=1A IC=6A; IB=1.2A 1.5 IC=5A; IB=1A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.0 3.0 1.0 3.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES Collector cut-off current mA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUT12AF IC=5A;IB1=-IB2=1A;VCC=250V 1.0 4.0 0.8 µs µs µs For BUT12F IC=6A;IB1=-IB2=1.2A;VCC=250V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT12F BUT12AF Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3